PHOTODETECTORS 光电二极管

结果: 10
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 产品 封装 / 箱体 安装风格 峰值波长 暗电流 Vr - 反向电压 上升时间 最小工作温度 最大工作温度 系列
Coherent 光电二极管 50 GHz single photodetector chip, single input, dual wavelength 1310 and 1550nm
CXPDV2
Coherent 光电二极管 35 GHz single photodetector chip, single input, single wavelength 1550nm, no impedance match
CXPDV2
Coherent 光电二极管 50 GHz single photodetector chip, single input, single wavelength 1550nm, 50Ohm impedance match
CXPDV2
Coherent 光电二极管 35 GHz single photodetector chip, single input, single wavelength 1550nm, no impedance match

CXPDV2
Coherent 光电二极管 50 GHz single photodetector chip, single input, single wavelength 1550nm, 50Ohm impedance match

CXPDV2
Coherent 光电二极管 50 GHz single photodetector chip, single input, dual wavelength 1310 and 1550nm, 50Ohm impedance match
CXPDV2
Advanced Photonix 光电二极管 10x10 mm fully depleted, high energy radiation photodetector

Photodiodes Ceramic-25 Through Hole 950 nm 2 nA 120 V 40 ns - 20 C + 60 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 15 mm sq. fully depleted, high energy radiation photodetector

Photodiodes TO-8 Through Hole 900 nm 1 nA 140 V 3 ns - 40 C + 100 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 3 mm diameter fully depleted, high energy radiation photodetector

Photodiodes TO-8 Through Hole 900 nm 0.2 nA 135 V 1.5 ns - 40 C + 100 C Lg Active HIghSpeed
Advanced Photonix 光电二极管 10x10 mm fully depleted, high energy radiation photodetector, low bias

Photodiodes Ceramic-25 Through Hole 950 nm 2 nA 70 V 6 ns - 20 C + 60 C Lg Active HIghSpeed