E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB102Q240J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 24pF 5% Ni/Sn

Johanson Technology QEDB102Q240J3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 24pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB102Q241F1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 1% Cu/Sn

Johanson Technology QEDB102Q241F3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 1% Cu/Sn

Johanson Technology QEDB102Q241G1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 2% Cu/Sn

Johanson Technology QEDB102Q241G3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 2% Cu/Sn

Johanson Technology QEDB102Q241J1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 5% Cu/Sn

Johanson Technology QEDB102Q241J3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 5% Cu/Sn

Johanson Technology QEDB102Q241K1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 10% Cu/Sn

Johanson Technology QEDB102Q241K3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 240pF 10% Cu/Sn

Johanson Technology QEDB102Q270G3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 2% Ni/Sn

Johanson Technology QEDB102Q270J1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Cu/Sn

Johanson Technology QEDB102Q270J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB102Q270J3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Cu/Sn

Johanson Technology QEDB102Q270J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Ni/Sn

Johanson Technology QEDB102Q270J3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB102Q271F1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 1% Cu/Sn

Johanson Technology QEDB102Q271F3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 1% Cu/Sn

Johanson Technology QEDB102Q271G1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 2% Cu/Sn

Johanson Technology QEDB102Q271G3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 2% Cu/Sn

Johanson Technology QEDB102Q271J1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 5% Cu/Sn

Johanson Technology QEDB102Q271J3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 5% Cu/Sn

Johanson Technology QEDB102Q271K1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 10% Cu/Sn

Johanson Technology QEDB102Q271K3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 270pF 10% Cu/Sn

Johanson Technology QEDB102Q2R0B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn AEC-Q200