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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R0B3GU001E
- QEDB102Q2R0B3GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R0B3GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Cu/Sn
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn
Johanson Technology QEDB102Q2R0B3GV001E
- QEDB102Q2R0B3GV001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R0B3GV001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R0B3GV002E
- QEDB102Q2R0B3GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R0B3GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn
Johanson Technology QEDB102Q2R1A1GV001E
- QEDB102Q2R1A1GV001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R1A1GV001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R1A1GV002E
- QEDB102Q2R1A1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R1A1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.05pF Cu/Sn
Johanson Technology QEDB102Q2R2A2GU001E
- QEDB102Q2R2A2GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2A2GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.05pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R2B1GV002E
- QEDB102Q2R2B1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2B1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R2B2GU001E
- QEDB102Q2R2B2GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2B2GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.1pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R2B3GU001E
- QEDB102Q2R2B3GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2B3GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn
Johanson Technology QEDB102Q2R2B3GV001E
- QEDB102Q2R2B3GV001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2B3GV001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R2B3GV002E
- QEDB102Q2R2B3GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2B3GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.5pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R2D1GV002E
- QEDB102Q2R2D1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R2D1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.5pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R4B1GV002E
- QEDB102Q2R4B1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R4B1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R4B3GU001E
- QEDB102Q2R4B3GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R4B3GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn
Johanson Technology QEDB102Q2R4B3GV001E
- QEDB102Q2R4B3GV001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R4B3GV001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R4B3GV002E
- QEDB102Q2R4B3GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R4B3GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.05pF Cu/Sn
Johanson Technology QEDB102Q2R7A2GU001E
- QEDB102Q2R7A2GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7A2GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.05pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R7B1GV002E
- QEDB102Q2R7B1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7B1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R7B2GU001E
- QEDB102Q2R7B2GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7B2GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.1pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Cu/Sn
Johanson Technology QEDB102Q2R7B3GU001E
- QEDB102Q2R7B3GU001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7B3GU001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Cu/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn
Johanson Technology QEDB102Q2R7B3GV001E
- QEDB102Q2R7B3GV001E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7B3GV001E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R7B3GV002E
- QEDB102Q2R7B3GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7B3GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.5pF Ni/Sn AEC-Q200
Johanson Technology QEDB102Q2R7D1GV002E
- QEDB102Q2R7D1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q2R7D1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.5pF Ni/Sn AEC-Q200
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 1% Ni/Sn AEC-Q200
Johanson Technology QEDB102Q300F1GV002E
- QEDB102Q300F1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q300F1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 1% Ni/Sn AEC-Q200
|
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基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 5% Ni/Sn AEC-Q200
Johanson Technology QEDB102Q300J1GV002E
- QEDB102Q300J1GV002E
- Johanson Technology
-
受限供货情况
|
Mouser 零件编号
609-B102Q300J1GV002E
|
Johanson Technology
|
基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 5% Ni/Sn AEC-Q200
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