E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB102Q2R0B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R0B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q2R0B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R1A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn

Johanson Technology QEDB102Q2R1A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.1pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R2A2GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.05pF Cu/Sn

Johanson Technology QEDB102Q2R2B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R2B2GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.20pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R2B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R2B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q2R2B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R2D1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.2pF 0.5pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R4B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R4B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R4B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q2R4B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.4pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R7A2GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.05pF Cu/Sn

Johanson Technology QEDB102Q2R7B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R7B2GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.70pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R7B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q2R7B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q2R7B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q2R7D1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 2.7pF 0.5pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q300F1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 1% Ni/Sn AEC-Q200

Johanson Technology QEDB102Q300J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 30pF 5% Ni/Sn AEC-Q200