E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB102Q8R2B2GV001P
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q8R2B2GV002P
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q8R2B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q8R2B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q8R2C3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Cu/Sn

Johanson Technology QEDB102Q8R2C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Ni/Sn

Johanson Technology QEDB102Q8R2C3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q9R1C1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 9.1pF 0.25pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q9R1C3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 9.1pF 0.25pF Cu/Sn

Johanson Technology QEDB102Q9R1C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 9.1pF 0.25pF Ni/Sn

Johanson Technology QEDB102Q9R1C3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 9.1pF 0.25pF Ni/Sn AEC-Q200

Johanson Technology QEDB152Q0R2A1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Cu/Sn

Johanson Technology QEDB152Q0R2A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Ni/Sn

Johanson Technology QEDB152Q0R2A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB152Q0R2A2GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Ni/Sn

Johanson Technology QEDB152Q0R2A3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Ni/Sn

Johanson Technology QEDB152Q0R2A3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB152Q0R2B1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Cu/Sn

Johanson Technology QEDB152Q0R2B1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Ni/Sn

Johanson Technology QEDB152Q0R2B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB152Q0R2B2GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Ni/Sn

Johanson Technology QEDB152Q0R2B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Cu/Sn

Johanson Technology QEDB152Q0R2B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Ni/Sn

Johanson Technology QEDB152Q0R2B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB152Q0R2C1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 0.2pF 0.25pF Cu/Sn