G 系列 无源元件

无源元件类型

更改类别视图
结果: 846
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QGCT102Q7R5B1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.1pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q7R5B3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.1pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q7R5C1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.25pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q7R5C3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.25pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q7R5D1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.5pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q7R5D3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 7.5pF 0.5pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820F1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 1% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820F3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 1% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820G1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 2% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820G3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 2% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820J1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 5% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820K1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 10% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q820K3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 820pF 10% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2B1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2B3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.1pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2C1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2C3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2D1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.5pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q8R2D3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 8.2pF 0.5pF Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910F1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 1% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910F3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 1% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910G1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 2% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910G3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 2% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910J1GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 5% Cu/Sn AEC-Q200

Johanson Technology QGCT102Q910J3GU002G
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 1000V 910pF 5% Cu/Sn AEC-Q200