E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB152Q110K1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Cu/Sn

Johanson Technology QEDB152Q110K1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Ni/Sn

Johanson Technology QEDB152Q110K1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q110K3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Cu/Sn

Johanson Technology QEDB152Q110K3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Ni/Sn

Johanson Technology QEDB152Q110K3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 11pF 10% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111F1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Cu/Sn

Johanson Technology QEDB152Q111F1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Ni/Sn

Johanson Technology QEDB152Q111F1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111F3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Cu/Sn

Johanson Technology QEDB152Q111F3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Ni/Sn

Johanson Technology QEDB152Q111F3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 1% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111G1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Cu/Sn

Johanson Technology QEDB152Q111G1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Ni/Sn

Johanson Technology QEDB152Q111G1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111G3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Cu/Sn

Johanson Technology QEDB152Q111G3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Ni/Sn

Johanson Technology QEDB152Q111G3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 2% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111J1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Cu/Sn

Johanson Technology QEDB152Q111J1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Ni/Sn

Johanson Technology QEDB152Q111J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111J3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Cu/Sn

Johanson Technology QEDB152Q111J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Ni/Sn

Johanson Technology QEDB152Q111J3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB152Q111K1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1500V 110pF 10% Cu/Sn