E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB101Q621J1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Cu/Sn

Johanson Technology QEDB101Q621J1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Ni/Sn

Johanson Technology QEDB101Q621J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q621J3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Cu/Sn

Johanson Technology QEDB101Q621J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Ni/Sn

Johanson Technology QEDB101Q621J3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q621K1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Cu/Sn

Johanson Technology QEDB101Q621K1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Ni/Sn

Johanson Technology QEDB101Q621K1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q621K3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Cu/Sn

Johanson Technology QEDB101Q621K3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Ni/Sn

Johanson Technology QEDB101Q621K3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 620pF 10% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q681J1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 680pF 5% Ni/Sn

Johanson Technology QEDB101Q681J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 680pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q751G3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 750pF 2% Cu/Sn

Johanson Technology QEDB101Q751J1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 750pF 5% Ni/Sn

Johanson Technology QEDB101Q751J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 750pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q751J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 750pF 5% Ni/Sn

Johanson Technology QEDB101Q751J3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 750pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB101Q821J1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 820pF 5% Ni/Sn

Johanson Technology QEDB101Q821J1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 100V 820pF 5% Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R2A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.2pF 0.05pF Ni/Sn

Johanson Technology QEDB102Q0R2A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.2pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R2B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.2pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R2B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.2pF 0.1pF Ni/Sn AEC-Q200