E 系列 无源元件

结果: 7,290
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Johanson Technology QEDB102Q0R3A1GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.05pF Cu/Sn

Johanson Technology QEDB102Q0R3A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.05pF Ni/Sn

Johanson Technology QEDB102Q0R3A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R3B1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R3B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R3B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R3B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.3pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R4A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.4pF 0.05pF Ni/Sn

Johanson Technology QEDB102Q0R4A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.4pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R4B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.4pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R4B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.4pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R5A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.5pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R5B1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.5pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R5B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.5pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q0R5B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.5pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R5B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.5pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R6A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.6pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R6B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.6pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q0R6B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.6pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R6B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.6pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R7B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.7pF 0.1pF Cu/Sn

Johanson Technology QEDB102Q0R7B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.7pF 0.1pF Ni/Sn

Johanson Technology QEDB102Q0R7B3GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.7pF 0.1pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R8A1GV002E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.8pF 0.05pF Ni/Sn AEC-Q200

Johanson Technology QEDB102Q0R8B3GU001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 0.8pF 0.1pF Cu/Sn