JDV2S41AFS,L3M
图像仅供参考
请参阅产品规格
请参阅产品规格
757-JDV2S41AFSL3M
JDV2S41AFS,L3M
制造商：
说明：
变容二极管 Variable capacitance diode for electronic tuning applications
变容二极管 Variable capacitance diode for electronic tuning applications
寿命周期:
Mouser 的新产品
库存量: 36
-
库存：
-
36可立即发货出现意外错误。请稍候重试。
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在途量:
-
10,000预期 2026/6/12
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生产周期：
-
13周 大于所示数量的预计工厂生产时间。
定价 (含13% 增值税)
| 数量 | 单价 |
总价
|
|---|---|---|
| ¥14.4753 | ¥14.48 | |
| ¥8.9383 | ¥89.38 | |
| ¥5.9099 | ¥590.99 | |
| ¥4.6443 | ¥2,322.15 | |
| ¥3.9663 | ¥3,966.30 | |
| ¥3.5934 | ¥8,983.50 | |
| ¥3.1979 | ¥15,989.50 | |
| ¥3.0849 | ¥30,849.00 | |
| ¥3.0058 | ¥75,145.00 |
数据表
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Precautions for using Radio-frequency semiconductor devices
Product Catalogs
合规代码
- CNHTS:
- 8541590000
- CAHTS:
- 8541100090
- USHTS:
- 8541100080
- TARIC:
- 8541100000
- ECCN:
- EAR99
原产地分类
- 原产国:
- 泰国
- 组装原产国/地区:
- 不可用
- 扩散国家:
- 不可用
