碳化硅 (SiC) 功率器件

ROHM Semiconductor SiC功率器件的绝缘击穿场强是传统硅功率器件的10倍,而带隙和热传导性能均是硅器件的3倍,因此,SiC功率器件具有更低的开关损耗和导通电阻,以及较高的工作温度,进而可降低功耗,缩小模块尺寸。此外,设计时所需要的元器件数也更少,降低了设计复杂度。

分离式半导体类型

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ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 55A N-CH SIC 61库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor 碳化硅MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor 碳化硅MOSFET TO247 650V 70A N-CH SIC 235库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor 碳化硅MOSFET TO247 650V 39A N-CH SIC 714库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor 碳化硅肖特基二极管 SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1,701库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor MOSFET模块 SIC Pwr Module Half Bridge 4库存量
最低: 1
倍数: 1

MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor 碳化硅MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 31A N-CH SIC 150库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor MOSFET模块 300A SiC Power Module 3库存量
最低: 1
倍数: 1

MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor 碳化硅肖特基二极管 RECT 1.2KV 10A RDL SIC SKY 752库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor 碳化硅肖特基二极管 RECT 1.2KV 20A RDL SIC SKY 1,391库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor 碳化硅MOSFET 1200V 40A 262W SIC 80mOhm TO-247N 117库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC 1,463库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-3PFM-3
ROHM Semiconductor 碳化硅MOSFET Nch 1200V 95A SiC TO-247N 66库存量
450预期 2026/8/12
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247N-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS 102库存量
最低: 1
倍数: 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 55A 40mOhm TrenchMOS 322库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS 779库存量
最低: 1
倍数: 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 297库存量
900预期 2026/2/24
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅肖特基二极管 SiC, SBD 650V 15A D2PAK 46库存量
最低: 1
倍数: 1
卷轴: 1,000

SiC Schottky Diodes SMD/SMT TO-263AB-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS 6库存量
450预期 2026/6/25
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS 92库存量
450预期 2026/5/20
最低: 1
倍数: 1
SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS 23库存量
1,350在途量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor 碳化硅肖特基二极管 SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 770库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor 碳化硅肖特基二极管 SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen 820库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor 碳化硅肖特基二极管 SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen 1库存量
最低: 1
倍数: 1

SiC Schottky Diodes Through Hole TO-220ACG-2