|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH11F
- CML Micro
-
10:
¥1,136.554
-
90库存量
|
Mouser 零件编号
938-MWT-PH11F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
90库存量
|
|
|
¥1,136.554
|
|
|
¥1,079.5681
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
- CGH60008D-GP4
- MACOM
-
10:
¥257.1767
-
660库存量
|
Mouser 零件编号
941-CGH60008D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 8 Watt
|
|
660库存量
|
|
|
¥257.1767
|
|
|
¥256.8151
|
|
|
查看
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH7F71
- CML Micro
-
1:
¥728.172
-
3库存量
|
Mouser 零件编号
938-MWT-PH7F71
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
3库存量
|
|
|
¥728.172
|
|
|
¥728.172
|
|
|
¥657.208
|
|
最低: 1
倍数: 1
:
10
|
|
RF MOSFET Transistors
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 30 Watt
- CG2H80030D-GP4
- MACOM
-
10:
¥1,051.0808
-
30库存量
|
Mouser 零件编号
941-CG2H80030D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 30 Watt
|
|
30库存量
|
|
|
¥1,051.0808
|
|
|
¥1,031.7126
|
|
最低: 10
倍数: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH8F71
- CML Micro
-
1:
¥1,188.7374
-
6库存量
|
Mouser 零件编号
938-MWT-PH8F71
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
6库存量
|
|
|
¥1,188.7374
|
|
|
¥1,188.7374
|
|
最低: 1
倍数: 1
:
10
|
|
RF MOSFET Transistors
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-18GHz, 25 Watt
- CGHV1J025D-GP4
- MACOM
-
10:
¥2,058.0464
-
20库存量
|
Mouser 零件编号
941-CGHV1J025D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-18GHz, 25 Watt
|
|
20库存量
|
|
|
¥2,058.0464
|
|
|
¥2,022.9486
|
|
最低: 10
倍数: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH15F
- CML Micro
-
10:
¥1,252.5711
-
100库存量
|
Mouser 零件编号
938-MWT-PH15F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100库存量
|
|
|
¥1,252.5711
|
|
|
¥1,251.8818
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
- MWT-LN600
- CML Micro
-
10:
¥280.7937
-
100库存量
|
Mouser 零件编号
938-MWT-LN600
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
|
|
100库存量
|
|
|
¥280.7937
|
|
|
¥274.6239
|
|
|
¥262.386
|
|
|
¥260.4763
|
|
|
报价
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH8F
- CML Micro
-
10:
¥1,004.6152
-
100库存量
|
Mouser 零件编号
938-MWT-PH8F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
100库存量
|
|
|
¥1,004.6152
|
|
|
¥967.3591
|
|
|
¥917.2436
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH9F
- CML Micro
-
10:
¥821.1936
-
100库存量
|
Mouser 零件编号
938-MWT-PH9F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100库存量
|
|
|
¥821.1936
|
|
|
¥820.9224
|
|
|
¥700.8034
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
CML Micro MWT-PH27F71
- MWT-PH27F71
- CML Micro
-
1:
¥486.7136
-
1库存量
|
Mouser 零件编号
938-MWT-PH27F71
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
1库存量
|
|
|
¥486.7136
|
|
|
¥486.7136
|
|
|
¥421.3092
|
|
最低: 1
倍数: 1
:
10
|
|
RF MOSFET Transistors
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
¥34.578
-
1,901库存量
-
新产品
|
Mouser 零件编号
65-EPC2090
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
1,901库存量
|
|
|
¥34.578
|
|
|
¥22.7469
|
|
|
¥15.9669
|
|
|
¥13.3227
|
|
|
¥11.0853
|
|
|
¥10.8367
|
|
最低: 1
倍数: 1
:
2,500
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
¥80.4786
-
800库存量
-
新产品
|
Mouser 零件编号
65-EPC2091
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
800库存量
|
|
|
¥80.4786
|
|
|
¥55.1666
|
|
|
¥41.1885
|
|
|
¥33.5836
|
|
最低: 1
倍数: 1
:
1,000
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2103
- EPC
-
1:
¥95.2025
-
919库存量
-
Mouser 的新产品
|
Mouser 零件编号
65-EPC2103
Mouser 的新产品
|
EPC
|
GaN 场效应晶体管 EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
|
|
919库存量
|
|
|
¥95.2025
|
|
|
¥65.8451
|
|
|
¥51.2794
|
|
|
¥42.0247
|
|
|
¥41.8552
|
|
最低: 1
倍数: 1
:
500
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
肖特基二极管与整流器 Diode,Schottky,GaAs,FlipChip,Single
- MA4E1317
- MACOM
-
100:
¥46.9854
-
600库存量
-
4,300在途量
|
Mouser 零件编号
937-MA4E1317
|
MACOM
|
肖特基二极管与整流器 Diode,Schottky,GaAs,FlipChip,Single
|
|
600库存量
4,300在途量
在途量:
1,300 预期 2026/7/16
3,000 预期 2026/7/31
|
|
|
¥46.9854
|
|
|
¥41.7761
|
|
|
¥36.9962
|
|
最低: 100
倍数: 100
|
|
Schottky Diodes & Rectifiers
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 15 Watt
- CG2H80015D-GP4
- MACOM
-
10:
¥951.7312
-
30库存量
|
Mouser 零件编号
941-CG2H80015D-GP4
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-8.0GHz, 15 Watt
|
|
30库存量
|
|
|
¥951.7312
|
|
|
¥933.9224
|
|
最低: 10
倍数: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band Linear Amplifier and Oscillator Applications
- MWT-5F
- CML Micro
-
1:
¥606.3128
-
20库存量
-
NRND
|
Mouser 零件编号
938-MWT-5F
NRND
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band Linear Amplifier and Oscillator Applications
|
|
20库存量
|
|
|
¥606.3128
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
PIN 二极管 Diode,Pin,chip,Ceramic,Si,Ods-1252
MACOM MA4PK3000-1252
- MA4PK3000-1252
- MACOM
-
25:
¥777.4965
-
75库存量
-
100预期 2026/10/21
|
Mouser 零件编号
937-MA4PK3000-1252
|
MACOM
|
PIN 二极管 Diode,Pin,chip,Ceramic,Si,Ods-1252
|
|
75库存量
100预期 2026/10/21
|
|
最低: 25
倍数: 25
|
|
PIN Diodes
|
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH31F
- CML Micro
-
1:
¥276.624
-
20库存量
|
Mouser 零件编号
938-MWT-PH31F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
20库存量
|
|
|
¥276.624
|
|
|
¥256.1258
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH32F
- CML Micro
-
1:
¥334.5591
-
9库存量
|
Mouser 零件编号
938-MWT-PH32F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
9库存量
|
|
|
¥334.5591
|
|
|
¥309.8008
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
- MWT-PH33F
- CML Micro
-
10:
¥150.516
-
30库存量
|
Mouser 零件编号
938-MWT-PH33F
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管
|
|
30库存量
|
|
|
¥150.516
|
|
|
¥150.2561
|
|
|
¥123.6785
|
|
|
¥116.0397
|
|
|
查看
|
|
|
¥114.6385
|
|
|
报价
|
|
最低: 10
倍数: 10
|
|
RF MOSFET Transistors
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
肖特基二极管与整流器 Diode,Schottky,GaAs,FlipChip,ReverseTee
MACOM MA4E1319-1
- MA4E1319-1
- MACOM
-
100:
¥66.8734
-
400库存量
|
Mouser 零件编号
937-MA4E1319-1
|
MACOM
|
肖特基二极管与整流器 Diode,Schottky,GaAs,FlipChip,ReverseTee
|
|
400库存量
|
|
|
¥66.8734
|
|
|
¥59.5849
|
|
|
¥55.7542
|
|
最低: 100
倍数: 100
|
|
Schottky Diodes & Rectifiers
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
- MWT-LN300
- CML Micro
-
10:
¥437.9993
-
20库存量
|
Mouser 零件编号
938-MWT-LN300
|
CML Micro
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Low Noise pHEMT Devices
|
|
20库存量
|
|
最低: 10
倍数: 10
:
10
|
|
RF MOSFET Transistors
|
GaAs
|
|
Die
|
|
|
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
- TGF2023-2-02
- Qorvo
-
100:
¥446.7681
-
100库存量
|
Mouser 零件编号
772-TGF2023-2-02
|
Qorvo
|
GaN 场效应晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
|
|
100库存量
|
|
最低: 100
倍数: 100
|
|
GaN FETs
|
GaN-on-SiC
|
|
Die
|
|
|
|
肖特基二极管与整流器 Diode,Schottky,ZBD,Chip
MACOM MA4E931Z2-1261A
- MA4E931Z2-1261A
- MACOM
-
100:
¥87.9253
-
1,100预期 2026/10/21
|
Mouser 零件编号
937-MA4E931Z2-1261A
|
MACOM
|
肖特基二极管与整流器 Diode,Schottky,ZBD,Chip
|
|
1,100预期 2026/10/21
|
|
|
¥87.9253
|
|
|
¥74.1958
|
|
最低: 100
倍数: 100
|
|
Schottky Diodes & Rectifiers
|
|
SMD/SMT
|
Die
|
|