晶体管

结果: 1,924
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics MOSFET N-CH 525 V 4.4 A SuperMESH3 1,401库存量
最低: 1
倍数: 1
: 2,500
MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-Ch 250 V 318 mOhm 8 A STripFET II 2,389库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET POWER MOSFET N-CH 500V 788库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package 2,026库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag 1,156库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 751库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 1,796库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics IGBT 模块 SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs 103库存量
最低: 1
倍数: 1

IGBT Modules Si Through Hole SDIP2B-26
STMicroelectronics IGBT 模块 SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT 355库存量
最低: 1
倍数: 1

IGBT Modules Si Through Hole NDIP-26
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate H series 600V 15A HiSpd 1,374库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 15 A low loss 467库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH 813库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power 644库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V 738库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) NPN Medium Power +30VCEO +5VBEO 3,250库存量
最低: 1
倍数: 1

BJTs - Bipolar Transistors Si Through Hole SOT-32-3 NPN
STMicroelectronics MOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on) 471库存量
最低: 1
倍数: 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel
STMicroelectronics MOSFET N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package 2,098库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected 2,321库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A 1,691库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-Channel 250V, 195mOhms, 14A STripFET II Power MOSFET 1,072库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 1,913库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO 1,600库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package 783库存量
最低: 1
倍数: 1
: 1,000

IGBT Transistors Si SMD/SMT
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT M series, 650 V 15 A low loss 113库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220FP-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) 600V 20A High Speed Trench Gate IGBT 1,013库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3