晶体管

结果: 1,926
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET 768库存量
最低: 1
倍数: 1
: 3,000

MOSFETs
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) NPN Power Transistor 910库存量
最低: 1
倍数: 1

BJTs - Bipolar Transistors Si Through Hole ISOWATT-218FX-3 NPN
STMicroelectronics MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH 697库存量
最低: 1
倍数: 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel
STMicroelectronics MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 1,578库存量
最低: 1
倍数: 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR 946库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa 831库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 963库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics 绝缘栅双极晶体管(IGBT) 30A 600V Fast IGBT 5kHz 1.9 VCE 457库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-3PF


STMicroelectronics MOSFET N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package 2,440库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel
STMicroelectronics MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power 722库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 620 V 8.4 A TO-220 TO-22 976库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep 935库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel


STMicroelectronics IGBT 模块 SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I 258库存量
最低: 1
倍数: 1

IGBT Modules Si
STMicroelectronics MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET 482库存量
最低: 1
倍数: 1
: 1,800

MOSFETs Si SMD/SMT TO-LL-8 N-Channel

STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package 382库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 97库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 NPN
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 PNP
STMicroelectronics 双极晶体管 - 双极结型晶体管(BJT) Rad-Hard 80 V, 5 A NPN transistor - Engineering model 14库存量
最低: 1
倍数: 1
BJTs - Bipolar Transistors Si SMD/SMT SMD.5 NPN


STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 522库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 465库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 362库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 293库存量
1,200预期 2026/8/31
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 415库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 261库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics 碳化硅MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 367库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel