晶体管

结果: 1,925
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
STMicroelectronics MOSFET N-channel 1500 V 2.5 A PowerMESH 3,272库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-3PF-3 N-Channel
STMicroelectronics MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package 1,097库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-3PF-3 N-Channel
STMicroelectronics MOSFET N-channel 1500 V 4 A PowerMESH 1,360库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-3PF-3 N-Channel
STMicroelectronics MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS 293库存量
最低: 1
倍数: 1

MOSFETs Si Through Hole TO-3PF-3 N-Channel
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-channel MOSFET 2,460库存量
最低: 1
倍数: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK packa 5,140库存量
最低: 1
倍数: 1
: 1,000

IGBT Transistors
STMicroelectronics 绝缘栅双极晶体管(IGBT) PowerMESH TM IGBT 6,998库存量
最低: 1
倍数: 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ 2,759库存量
最低: 1
倍数: 1
: 2,500

IGBT Transistors Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics 绝缘栅双极晶体管(IGBT) Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ 2,757库存量
最低: 1
倍数: 1
: 2,500

IGBT Transistors Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics 绝缘栅双极晶体管(IGBT) 4.5 A 600V IGBT 20V VGE 25A IFSM 18,560库存量
最低: 1
倍数: 1
: 2,500

IGBT Transistors Si SMD/SMT DPAK


STMicroelectronics 绝缘栅双极晶体管(IGBT) N-channel 600 V, 7 A very fast IGBT 3,046库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole IPAK-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-Ch 600 Volt 14 Amp 2,991库存量
最低: 1
倍数: 1
: 2,500

IGBT Transistors Si SMD/SMT TO-252-3
STMicroelectronics IGBT 模块 N-Ch 600 Volt 150Amp 86库存量
最低: 1
倍数: 1

IGBT Modules Si Through Hole ISOTOP-4
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-Ch 1200 Volt 3 Amp 5,146库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3 FP


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 7 A high speed 4,862库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-Ch 600 Volt 10 Amp 4,266库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) PowerMESH TM IGBT 2,517库存量
55,000在途量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) 7A 1200 V Very Fast IGBT Power Bipolar 7,999库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed 3,931库存量
1,000预期 2026/11/9
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) IGBT 3,233库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-220-3 FP
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 1,019库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 512库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 597库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 600 V, 30 A high speed HB series IGBT 4,398库存量
4,600在途量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics 绝缘栅双极晶体管(IGBT) N-CHANNEL IGBT 2,526库存量
最低: 1
倍数: 1

IGBT Transistors Si Through Hole TO-247-3