BGB 741L7ESD E6327

Infineon Technologies
726-BGB741L7ESDE63
BGB 741L7ESD E6327

制造商:

说明:
射频放大器 RF BIP TRANSISTORS

ECAD模型:
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库存量: 14,534

库存:
14,534
可立即发货
在途量:
15,000
预期 2026/4/16
生产周期:
12
大于所示数量的预计工厂生产时间。
最少: 1   倍数: 1
单价:
¥-.--
总价:
¥-.--
预估关税:
封装:
整卷卷轴(请按7500的倍数订购)

定价 (含13% 增值税)

数量 单价
总价
剪切带/MouseReel™
¥8.2716 ¥8.27
¥7.0851 ¥70.85
¥6.6218 ¥165.55
¥6.1246 ¥612.46
¥5.7856 ¥1,446.40
¥5.5031 ¥2,751.55
¥5.2771 ¥5,277.10
¥5.2658 ¥21,063.20
整卷卷轴(请按7500的倍数订购)
¥4.5878 ¥34,408.50
† ¥15.00 MouseReel™费将被加上并在购物车计算。所有MouseReel™订单均不可撤消和退回。

产品属性 属性值 选择属性
Infineon
产品种类: 射频放大器
RoHS:  
50 MHz to 3.5 GHz
1.8 V to 4 V
10 mA
20 dB
1.05 dB
Low Noise Amplifiers
SMD/SMT
TSLP-7-1
SiGe
- 6.5 dBm
1 dBm
- 55 C
+ 150 C
BGB741L7
Reel
Cut Tape
MouseReel
商标: Infineon Technologies
通道数量: 1 Channel
Pd-功率耗散: 120 mW
产品类型: RF Amplifier
工厂包装数量: 7500
子类别: Wireless & RF Integrated Circuits
测试频率: 150 MHz
零件号别名: SP000442946 BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1
单位重量: 2 mg
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已选择的属性: 0

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CNHTS:
8542339000
CAHTS:
8541290000
USHTS:
8542330001
JPHTS:
8541290100
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.