2400 存储器 IC

结果: 113
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ISSI IS43LR32400G-6BL
ISSI 动态随机存取存储器 128M, 1.8V, Mobile DDR, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS
数据表
无库存交货期 10 周
最低： 240
倍数： 240

DRAM SMD/SMT BGA-90
ADLINK Technology DDR4 2400 288P 16GB REG-DIMM
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx72, R-DIMM 288P, 1.2V, Rank:2, CL17, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8)
Memory Modules 16 GB
ADLINK Technology DDR4 2400 8GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
Memory Modules 8 GB
ADLINK Technology DDR4 2400 ECC 260P 8GB
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL17, ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
Memory Modules 8 GB
ADLINK Technology DDR4 2400 288P 8GB REG-DIMM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx72, R-DIMM 288P, 1.2V, Rank:1, CL17, ECC, OP Temp:0-85, Fix Die:Yes(C-die), Samsung Chip(1Gx8)
Memory Modules 8 GB
ADLINK Technology DDR4 2400 ECC 260P 4GB
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512Mx72, SO-DIMM 260P, 1.2V, Rank:1, CL17, ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
Memory Modules 4 GB
ADLINK Technology DDR4 2400 ECC 260P 16GB
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL17, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8)
Memory Modules 16 GB
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS
数据表

DRAM SMD/SMT BGA-90 128 Mbit
ISSI 动态随机存取存储器 Automotive (-40 to +85C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ISSI 动态随机存取存储器 Automotive (-40 to +105C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ADLINK Technology 8G SOD DDR4 2400 DDR4 SDRAM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
Memory Modules 8 GB
ADLINK Technology DDR4 2400 260P 16GB SO-DIMM 2Rx16
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8)
Memory Modules 16 GB
ADLINK Technology DDR4 2400 260P 8GB SODIMM 2Rx16
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
Memory Modules 8 GB
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
数据表

DRAM SMD/SMT BGA-90 128 Mbit
ISSI 动态随机存取存储器 Automotive (-40 to +85C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
数据表

DRAM SMD/SMT BGA-90 128 Mbit
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ADLINK Technology DDR4 2400 288P 16GB ECC DIMM
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Samsung Fix Die:No, Chip(2Gx8)
Memory Modules 32 GB
ISSI 动态随机存取存储器 Automotive (-40 to +105C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 166MHz, 86 pin TSOP II (400 mil) RoHS, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
数据表

DRAM SMD/SMT BGA-90 128 Mbit
ADLINK Technology DDR4 2400 260P 4GB SODIMM 1Rx8
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL17, Non-ECC, OP Temp:0 85, Fix Die:No(F-die), Samsung Chip(512Mx8)
Memory Modules 4 GB
ADLINK Technology DDR4 2400 260P 4GB non-ECC SODIMM
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512x64, SO-DIMM 260P, 1.2V, Rank:1, CL17, non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512M x16*4 ) height:30mm
Memory Modules 4 GB
ISSI 动态随机存取存储器 Automotive (-40 to +85C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143MHz, 86 pin TSOP II (400 mil) RoHS, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ISSI 动态随机存取存储器 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit
ISSI 动态随机存取存储器 Automotive (-40 to +105C), 128M, 3.3V, S动态随机存取存储器, 4Mx32, 143MHz, 86 pin TSOP II (400 mil) RoHS, T&R
数据表

DRAM SMD/SMT TSOP-II-86 128 Mbit