ADLINK Technology 存储器模块

结果: 143
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 产品 存储容量 存储类型 速度 工作电源电压 最大工作温度 管脚数量
ADLINK Technology 8G DDR4-3200 U-DIMM NON ECC
ADLINK Technology 存储器模块 DDR4-3200, 8GB, 1Gx64, U-DIMM 288P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
UDIMMs 8 GB DDR4 3200 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology 8G SOD DDR4 2400 DDR4 SDRAM
ADLINK Technology 存储器模块 DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
SODIMMs 8 GB DDR4 2400 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology 8G SOD DDR4 2666 DDR4 SDRAM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
SODIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR2 PC2-5300 200P 512MB
ADLINK Technology 存储器模块 DDR2 PC2-5300, 512MB, 64Mx64, SO-DIMM 200P, 1.8V, Rank:1, CL5, Non-ECC, OP Temp:0 85, Fix Die:No(M-die), Micron M-die
SODIMMs 512 MB DDR2 5300 MT/s 1.8 V + 85 C 200 Pin
ADLINK Technology DDR3 1333 204P 4GB SO-DIMM
ADLINK Technology 存储器模块 DDR3-1333, 4GB, 512Mx64, SO-DIMM 204P, 1.5V, Rank:2, CL9, Non-ECC, OP Temp:0 85, Fix Die:Yes(F-die), Samsung Chip(256Mx8)
SODIMMs 4 GB DDR3 1333 MT/s 1.5 V + 85 C 204 Pin
ADLINK Technology DDR3 1333 244P 4GB W ECC
ADLINK Technology 存储器模块 DDR3-1333, 4GB, 512Mx72, VLP RDIMM 244P, 1.5V, Rank:1, CL9, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512Mx8)
VLP RDIMMs, ECC 4 GB DDR3 1333 MT/s 1.5 V + 85 C 244 Pin
ADLINK Technology DDR3 1333 204P 2GB SO-DIMM
ADLINK Technology 存储器模块 DDR3-1333, 2GB, 256Mx64, SO-DIMM 204P, 1.5V, Rank:1, CL9, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(256Mx8)
SODIMMs 2 GB DDR3 1333 MT/s 1.5 V + 85 C 204 Pin
ADLINK Technology DDR3 1333 204P 4GB ECC-SODIMM
ADLINK Technology 存储器模块 DDR3-1333, 4GB, 512Mx72, SO-DIMM 204P, 1.5V, Rank:2, CL9, ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(256Mx8)
SODIMMs, ECC 4 GB DDR3 1333 MT/s 204 Pin
ADLINK Technology DDR3 1600 240P 2GB
ADLINK Technology 存储器模块 DDR3-1600, 2GB, 256Mx64, UDIMM 240P, 1.5V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip
UDIMMs 2 GB DDR3 1600 MT/s 1.5 V + 85 C 240 Pin
ADLINK Technology DDR3 1600 240P 4GB
ADLINK Technology 存储器模块 DDR3-1600, 4GB, 512Mx64, UDIMM 240P, 1.5V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No(E-die), Samsung Chip(512Mx8)
UDIMMs 4 GB DDR3 1600 MT/s 1.5 V + 85 C 240 Pin
ADLINK Technology DDR3L 1333 204P 2GB SO-DIMM
ADLINK Technology 存储器模块 DDR3L-1333, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL9, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(256Mx8)
SODIMMs 2 GB DDR3L 1333 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1333 204P 2GB SO-DIMM 1Rx8
ADLINK Technology 存储器模块 DDR3L-1333, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL9, Non-ECC, OP Temp:0 85, Fix Die:Yes(F-die), Samsung Chip(256Mx8), SPD Write-Protection
SODIMMs 2 GB DDR3L 1333 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1333 204P 2GB
ADLINK Technology 存储器模块 DDR3-1333, 2GB, 256Mx64, SO-DIMM 204P, 1.5V, Rank:1, CL9, Non-ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(256Mx8)
SODIMMs 2 GB DDR3L 1333 MT/s 1.5 V + 85 C 204 Pin
ADLINK Technology DDR3L 1333 204P 4GB
ADLINK Technology 存储器模块 DDR3L-1333, 4GB, 512Mx64, SO-DIMM 204P, 1.35V, Rank:2, CL9, Non-ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(256Mx8)
SODIMMs 4 GB DDR3L 1333 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1600 204P 4GB
ADLINK Technology 存储器模块 DDR3L-1600, 4GB, 512Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:-40 85, Fix Die:No, Samsung Chip(512Mx8)
SODIMMs 4 GB DDR3L 1600 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1600 204P 4GB SODIMM INDUS
ADLINK Technology 存储器模块 DDR3L-1600, 4GB, 512Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:-40-85, Fix Die:No, Micron Chip(512Mx8)
SODIMMs 4 GB DDR3L 1600 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1600 204P 4GB non-ECC SODIMM
ADLINK Technology 存储器模块 DDR3-1600, 4GB, 512Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512Mx8x8), Height:30.0mm
SODIMMs 4 GB DDR3L 1600 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L 1600 204P 2GB non-ECC SODIMM
ADLINK Technology 存储器模块 DDR3-1600, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, NTC-J Chip(256Mx8x8), Height:30.0mm
SODIMMs 2 GB DDR3L 1600 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L PC3-12800 2GB SO-DIMM
ADLINK Technology 存储器模块 DDR3L PC3-12800, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:-40 85, Fix Die:No, Chip(256Mx16)
SODIMMs 2 GB DDR3L 12800 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L PC3-12800 204P 2GB
ADLINK Technology 存储器模块 DDR3L PC3-12800, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(256Mx16)
SODIMMs 2 GB DDR3L 12800 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR3L PC3-14900 204P 2GB
ADLINK Technology 存储器模块 DDR3L-1600, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(256Mx8)
SODIMMs 2 GB DDR3L 1600 MT/s 1.35 V + 85 C 204 Pin
ADLINK Technology DDR4 2133 260P 4GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2133, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512Mx8)
SODIMMs 4 GB DDR4 2133 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2133 260P 8GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2133, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(512Mx8)
SODIMMs 8 GB DDR4 2133 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM INDUS
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 260P 16GB ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin