ADLINK Technology 存储器模块

结果: 143
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 产品 存储容量 存储类型 速度 工作电源电压 最大工作温度 管脚数量
ADLINK Technology DDR4 2666 288P 32GB RDIMM ECC
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, R-DIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0-85
RDIMMs, ECC 32 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8)
UDIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB ECC U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx72, U-DIMM 288P, 1.2V, Rank:1, CL19, ECC, OP Temp:0-85, Fix Die:Yes(F-die), Samsung Chip(512Mx8), anti-sulfur
UDIMMs, ECC 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 4GB U-DIMM non-ECC
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
UDIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 8GB U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, U-DIMM 288P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
UDIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 8GB U-DIMM non-ECC
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx64, U-DIMM 288P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No(F-die), Samsung Chip(512Mx8)
UDIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 288P 8GB ECC U-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 1Gx72, U-DIMM 288P, 1.2V, Rank:1, CL19, ECC, OP Temp:0-85, Fix Die:No(C-die), Samsung Chip(1Gx8)
UDIMMs, ECC 8 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666 4GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(512Mx16)
SODIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666 ECC 32GB SO-DIMM
ADLINK Technology 存储器模块 DDR4-2666, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL19, ECC, OP Temp:-40 85, Fix Die:No, Samsung Chip(2Gx8), anti-sulfur, hight:30mm
SODIMMs, ECC 32 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2666MHZ 8GB RDIMM
ADLINK Technology 存储器模块 DDR4-2666, 8GB, 512Mx8, RDIMM 288P, 1.2V, Rank:2, CL19, ECC, OP Temp:0 85, Fix Die:No, Chip(512Mx8), M4R0-8GSSBCIK
RDIMMs 8 GB DDR4 2666 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 2666MHZ 260P 4GB SODIMM
ADLINK Technology 存储器模块 DDR4-2666, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL19, Non-ECC, OP Temp:0 85, Fix Die:No, Chip(512Mx8)
SODIMMs 4 GB DDR4 2666 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2400 ECC 260P 16GB
ADLINK Technology 存储器模块 DDR4-2400, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL17, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8)
SODIMMs, ECC 16 GB DDR4 2400 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 2400 ECC 260P 4GB
ADLINK Technology 存储器模块 DDR4-2400, 4GB, 512Mx72, SO-DIMM 260P, 1.2V, Rank:1, CL17, ECC, OP Temp:0 85, Fix Die:No, Samsung Chip(512Mx8)
SODIMMs, ECC 4 GB DDR4 2400 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 16GB ECC SO-DIMM
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1Gx8), anti-sulfur, Height:30.00mm
SODIMMs, ECC 16 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 ECC SODIMM 3200-22 32GB SA-A INDUS
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4096Mx72, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:-40-85, Fix Die:No, Chip(2048M x8*18 ), height:30mm
SODIMMs, ECC 32 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 260P 16GB SODIMM ECC
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 2Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:-40-95, Fix Die:Yes(C-die), Samsung Chip(1Gx8), anti-sulfur
SODIMMs, ECC 16 GB DDR4 3200 MT/s 1.2 V + 95 C 260 Pin
ADLINK Technology DDR4 3200 260P 32GB ECC-SO-DIMM Indus
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:-40-85, Fix Die:No, Samsung Chip(2Gx8), Anti-sulfur, Height:30mm
SODIMMs, ECC 32 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 260P 32GB ECC SODIMM
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4Gx72, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:0-85, Fix Die:No(A-die), Samsung Chip(2Gx8), hight:30mm
SODIMMs, ECC 32 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 260P 8GB NON-ECC SODIMM INDUS
ADLINK Technology 存储器模块 DDR4-3200, 8GB, 1024Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, non-ECC, OP Temp:-40-85, Fix Die:No, Samsung Chip(1024M x8*8 ), height:30mm
SODIMMs 8 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 260P 16GB ECC SODIMM INDUS
ADLINK Technology 存储器模块 DDR4-3200, 16GB, 1024x8, SO-DIMM 260P, 1.2V, Rank:2, CL22, ECC, OP Temp:-40-95, Fix Die:No, Samsung Chip(K4A8G085WC-BIWE), height:30mm
SODIMMs, ECC 16 GB DDR4 3200 MT/s 1.2 V + 95 C 260 Pin
ADLINK Technology DDR4 3200 260P 16GB SODIMM INDUS
ADLINK Technology 存储器模块
SODIMMs 16 GB DDR4 3200 MT/s 260 Pin
ADLINK Technology DDR4 3200 260P 4GB NON-ECC SODIMM INDUS
ADLINK Technology 存储器模块 DDR4-3200, 4GB, 512Mx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, non-ECC, OP Temp:-40-85, Fix Die:No, Samsung Chip(512M x8*8 ), height:30mm
SODIMMs 4 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin
ADLINK Technology DDR4 3200 288P 16GB REG-DIMM
ADLINK Technology 存储器模块
RDIMMs 16 GB DDR4 3200 MT/s 288 Pin
ADLINK Technology DDR4 3200 288P 32GB REG-DIMM ECC Indus
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4Gx72, R-DIMM 288P, 1.2V, Rank:2, CL22, ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), anti-sulfur
RDIMMs, ECC 32 GB DDR4 3200 MT/s 1.2 V + 85 C 288 Pin
ADLINK Technology DDR4 3200 32GB SO-DIMM Non-ECC
ADLINK Technology 存储器模块 DDR4-3200, 32GB, 4Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Memory Chip(2Gx8)
SODIMMs 32 GB DDR4 3200 MT/s 1.2 V + 85 C 260 Pin