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ADLINK Technology 存储器模块

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制造商 = ADLINK Technology

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图像	零件编号	制造商	描述	数量	产品	存储容量	存储类型	速度	工作电源电压	最大工作温度	管脚数量
存储器模块 DDR5-4800, 16GB, 1Rx8 2Gx8,ECC-SO-DIMM 262P, 1.1V, Rank:1, CL40, OP Temp:0 95, Fix Die:No, Samsung Chip(2Gx8), ADLINK Technology DDR5 4800 ECC 16GB SO-DIMM DDR5 4800 ECC 16GB SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 4800 ECC 16GB SO-DIMM Mouser 零件编号 976-DDR54800ECC16GB 新产品	ADLINK Technology	存储器模块 DDR5-4800, 16GB, 1Rx8 2Gx8,ECC-SO-DIMM 262P, 1.1V, Rank:1, CL40, OP Temp:0 95, Fix Die:No, Samsung Chip(2Gx8),	受限供货情况	SODIMMs, ECC	16 GB	DDR5	4800 MT/s	1.1 V	+ 95 C	260 Pin
存储器模块 DDR5-4800, 32GB, 2Rx8 2Gx8,ECC-SO-DIMM 262P, 1.1V, Rank:2, CL40, OP Temp:0 95, Fix Die:No, Samsung Chip(2Gx8), ADLINK Technology DDR5 4800 ECC 32GB SO-DIMM DDR5 4800 ECC 32GB SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 4800 ECC 32GB SO-DIMM Mouser 零件编号 976-DDR54800ECC32GB 新产品	ADLINK Technology	存储器模块 DDR5-4800, 32GB, 2Rx8 2Gx8,ECC-SO-DIMM 262P, 1.1V, Rank:2, CL40, OP Temp:0 95, Fix Die:No, Samsung Chip(2Gx8),	受限供货情况	SODIMMs, ECC	32 GB	DDR5	4800 MT/s	1.1 V	+ 95 C	260 Pin
存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(2Gx8) ADLINK Technology DDR5 5600 16GB NON-ECC SO-DIMM INDUS DDR5 5600 16GB NON-ECC SO-DIMM INDUS ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 16GB NON-ECC SO-DIMM INDUS Mouser 零件编号 976-DDR5560016GB 新产品	ADLINK Technology	存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(2Gx8)	受限供货情况	SODIMMs	16 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 16GB, 2Gx72, U-DIMM 288P, 1.1V, Rank:1, CL46, ECC, OP Temp:0 95, Fix Die:No, Chip(2Gx8*10), Anti-sulfur ADLINK Technology DDR5-5600 16GB ECC UDIMM DDR5-5600 16GB ECC UDIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5-5600 16GB ECC UDIMM Mouser 零件编号 976-DDR5560016GBECC 新产品	ADLINK Technology	存储器模块 DDR5-5600, 16GB, 2Gx72, U-DIMM 288P, 1.1V, Rank:1, CL46, ECC, OP Temp:0 95, Fix Die:No, Chip(2Gx8*10), Anti-sulfur	受限供货情况	UDIMMs, ECC	16 GB	DDR5	5600 MT/s	1.1 V	+ 85 C	288 Pin
存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, CL46, Rank:1, ECC, OP Temp:-40-95, Fix Die: Yes(A-die), Hynix Chip(2048Mx8), height 30 mm ADLINK Technology DDR5 5600 16GB ECC SO-DIMM INDUS DDR5 5600 16GB ECC SO-DIMM INDUS ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 16GB ECC SO-DIMM INDUS Mouser 零件编号 976-DDR5560016GI 新产品	ADLINK Technology	存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, CL46, Rank:1, ECC, OP Temp:-40-95, Fix Die: Yes(A-die), Hynix Chip(2048Mx8), height 30 mm	受限供货情况	SODIMMs, ECC	16 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:0 95, Fix Die:Yes(P-die), Samsung Chip(2Gx8) ADLINK Technology DDR5 5600 16GB non-ECC SO-DIMM DDR5 5600 16GB non-ECC SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 16GB non-ECC SO-DIMM Mouser 零件编号 976-DDR5560016GNE 新产品	ADLINK Technology	存储器模块 DDR5-5600, 16GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:0 95, Fix Die:Yes(P-die), Samsung Chip(2Gx8)	受限供货情况	SODIMMs	16 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 32GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:2, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(2Gx8) ADLINK Technology DDR5 5600 32GB NON-ECC SO-DIMM INDUS DDR5 5600 32GB NON-ECC SO-DIMM INDUS ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 32GB NON-ECC SO-DIMM INDUS Mouser 零件编号 976-DDR5560032GB 新产品	ADLINK Technology	存储器模块 DDR5-5600, 32GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:2, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(2Gx8)	受限供货情况	SODIMMs	32 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 32GB, 4Gx72, U-DIMM 288P, 1.1V, Rank:2, CL46, ECC, OP Temp:0 95, Fix Die:No, Chip(2Gx8*20), Anti-sulfur ADLINK Technology DDR5-5600 32GB ECC UDIMM DDR5-5600 32GB ECC UDIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5-5600 32GB ECC UDIMM Mouser 零件编号 976-DDR5560032GBDIM 新产品	ADLINK Technology	存储器模块 DDR5-5600, 32GB, 4Gx72, U-DIMM 288P, 1.1V, Rank:2, CL46, ECC, OP Temp:0 95, Fix Die:No, Chip(2Gx8*20), Anti-sulfur	受限供货情况	UDIMMs, ECC	32 GB	DDR5	5600 MT/s	1.1 V	+ 85 C	288 Pin
存储器模块 DDR5-5600, 32GB, 4Gx72, SO-DIMM 262P, 1.1V, CL46, Rank:2, ECC, OP Temp:-40-95, Fix Die: Yes(A-die), Hynix Chip(2048Mx8), height 30 mm ADLINK Technology DDR5 5600 32GB ECC SO-DIMM INDUS DDR5 5600 32GB ECC SO-DIMM INDUS ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 32GB ECC SO-DIMM INDUS Mouser 零件编号 976-DDR5560032GI 新产品	ADLINK Technology	存储器模块 DDR5-5600, 32GB, 4Gx72, SO-DIMM 262P, 1.1V, CL46, Rank:2, ECC, OP Temp:-40-95, Fix Die: Yes(A-die), Hynix Chip(2048Mx8), height 30 mm	受限供货情况	SODIMMs, ECC	32 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 32GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:2, CL46, non-ECC, OP Temp:0 95, Fix Die:Yes(P-die), Samsung Chip(2Gx8) ADLINK Technology DDR5 5600 32GB non-ECC SO-DIMM DDR5 5600 32GB non-ECC SO-DIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 32GB non-ECC SO-DIMM Mouser 零件编号 976-DDR5560032GNE 新产品	ADLINK Technology	存储器模块 DDR5-5600, 32GB, 2Gx8, SO-DIMM 262P, 1.1V, Rank:2, CL46, non-ECC, OP Temp:0 95, Fix Die:Yes(P-die), Samsung Chip(2Gx8)	受限供货情况	SODIMMs	32 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR5-5600, 8GB, 1Gx16, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(1Gx16) ADLINK Technology DDR5 5600 8GB NON-ECC SO-DIMM INDUS DDR5 5600 8GB NON-ECC SO-DIMM INDUS ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR5 5600 8GB NON-ECC SO-DIMM INDUS Mouser 零件编号 976-DDR556008GI 新产品	ADLINK Technology	存储器模块 DDR5-5600, 8GB, 1Gx16, SO-DIMM 262P, 1.1V, Rank:1, CL46, non-ECC, OP Temp:-40-95, Fix Die:Yes(P-die), Samsung Chip(1Gx16)	受限供货情况	SODIMMs	8 GB	DDR5	5600 MT/s	1.1 V	+ 95 C	262 Pin
存储器模块 DDR3L-1600, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(256Mx16) ADLINK Technology DDR3L 1600 204P 2GB SODIMM DDR3L 1600 204P 2GB SODIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR3L 1600 204P 2GB SODIMM Mouser 零件编号 976-L1600204P2GBDIM 新产品	ADLINK Technology	存储器模块 DDR3L-1600, 2GB, 256Mx64, SO-DIMM 204P, 1.35V, Rank:1, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(256Mx16)	受限供货情况	SODIMMs	2 GB	DDR3L	1600 MT/s	1.35 V	+ 85 C	204 Pin
存储器模块 DDR3-1600, 8GB, 1024Mx64, SO-DIMM 204P, 1.35V, Rank:2, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1024Mx8x8), Height:30.0mm ADLINK Technology DDR3L 1600 204P 8GB NON-ECC SODIMM DDR3L 1600 204P 8GB NON-ECC SODIMM ADLINK Technology 受限供货情况新产品	制造商零件编号 DDR3L 1600 204P 8GB NON-ECC SODIMM Mouser 零件编号 976-L1600204P8GBNON 新产品	ADLINK Technology	存储器模块 DDR3-1600, 8GB, 1024Mx64, SO-DIMM 204P, 1.35V, Rank:2, CL11, Non-ECC, OP Temp:0-85, Fix Die:No, Samsung Chip(1024Mx8x8), Height:30.0mm	受限供货情况	SODIMMs	8 GB	DDR3L	1600 MT/s	1.35 V	+ 85 C	204 Pin
存储器模块 SDRAM PC133, 512MB, 32Mx16, SO-DIMM 144P, 3.3V, Rank:1, CL3, Non-ECC, OP Temp:0 70, Fix Die:Yes(J-die), PROMOS chip(32Mx16) ADLINK Technology SDRAM 144P PC133 512MB SDRAM 144P PC133 512MB ADLINK Technology 受限供货情况新产品	制造商零件编号 SDRAM 144P PC133 512MB Mouser 零件编号 976-SDRAM144PPC1335 新产品	ADLINK Technology	存储器模块 SDRAM PC133, 512MB, 32Mx16, SO-DIMM 144P, 3.3V, Rank:1, CL3, Non-ECC, OP Temp:0 70, Fix Die:Yes(J-die), PROMOS chip(32Mx16)	受限供货情况	SODIMMs	512 MB			3.3 V	+ 70 C	144 Pin
存储器模块 DDR4-3200, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur ADLINK Technology Transcend DDR4 260P 3200MHz 16G Transcend DDR4 260P 3200MHz 16G ADLINK Technology 受限供货情况新产品	制造商零件编号 Transcend DDR4 260P 3200MHz 16G Mouser 零件编号 976-TRANDDR4260P16G 新产品	ADLINK Technology	存储器模块 DDR4-3200, 16GB, 2Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur	受限供货情况	SODIMMs	16 GB	DDR4		1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-3200, 32GB, 4Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), anti-sulfur, hight:30mm ADLINK Technology Transcend DDR4 260P 3200MHz 32G Transcend DDR4 260P 3200MHz 32G ADLINK Technology 受限供货情况新产品	制造商零件编号 Transcend DDR4 260P 3200MHz 32G Mouser 零件编号 976-TRANDDR4260P32G 新产品	ADLINK Technology	存储器模块 DDR4-3200, 32GB, 4Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(A-die), Samsung Chip(2Gx8), anti-sulfur, hight:30mm	受限供货情况	SODIMMs	32 GB	DDR4		1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur, hight:30mm ADLINK Technology Transcend DDR4 260P 3200MHz 8G Transcend DDR4 260P 3200MHz 8G ADLINK Technology 受限供货情况新产品	制造商零件编号 Transcend DDR4 260P 3200MHz 8G Mouser 零件编号 976-TRANDDR4260P8G 新产品	ADLINK Technology	存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No(C-die), Samsung Chip(1Gx8), anti-sulfur, hight:30mm	受限供货情况	SODIMMs	8 GB	DDR4		1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8), anti-sulfur ADLINK Technology TRANSCEND TS1GSH64V2B TRANSCEND TS1GSH64V2B ADLINK Technology 受限供货情况新产品	制造商零件编号 TRANSCEND TS1GSH64V2B Mouser 零件编号 976-TRANTS1GSH64V2B 新产品	ADLINK Technology	存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8), anti-sulfur	受限供货情况	SODIMMs	8 GB	DDR4	3200 MT/s	1.2 V	+ 85 C	260 Pin
存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8) ADLINK Technology INNODISK DDR4 260P 3200MHZ 8G INNODISK DDR4 260P 3200MHZ 8G ADLINK Technology 受限供货情况新产品	制造商零件编号 INNODISK DDR4 260P 3200MHZ 8G Mouser 零件编号 976DDR4260P8G 新产品	ADLINK Technology	存储器模块 DDR4-3200, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:1, CL22, Non-ECC, OP Temp:-40-85, Fix Die:No, Chip(1Gx8)	受限供货情况	SODIMMs	8 GB	DDR4	3200 MT/s	1.2 V	+ 85 C	260 Pin

ADLINK Technology 存储器模块

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