Memory for Digital X-Ray Imaging

Memory stores data and programs for later use. Some memory is Read-Only, which means nothing new can be stored, and other memory is Read/Write memory where a processor can read from or write to this method of data storage. Some memory is non-volatile, meaning that a power source is not required to preserve stored information. Other types of memory lose their information and become a blank slate every time power is removed from the device. Two types of memory, EEPROM and flash, share many of the same qualities - in fact, flash memory is often considered an advanced form of EEPROM. F-RAM is another type of non-volatile memory that offers fast writes, high endurance, and low energy consumption. Unlike flash, EEPROM is erasable at a more precise, byte-wise level. For this reason among others, EEPROM continues to see industry use in applications that must store small amounts of non-volatile data.

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结果: 34
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 封装 / 箱体 接口类型 存储容量 组织 数据总线宽度 访问时间 电源电压-最小 电源电压-最大 工作电源电流 最小工作温度 最大工作温度 系列 封装
Everspin Technologies 磁阻随机存取存储器 (MRAM) 4Mb 3.3V 50Mhz 512K x 8 SPI
1,140预期 2026/12/2
最低: 1
倍数: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 20 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 85 C MR20H40 Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 4Mb 3.3V 512Kx8 SPI
5,652在途量
最低: 1
倍数: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 25 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 85 C MR25H40 Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 4Mb 3.3V 512Kx8 SPI 磁阻随机存取存储器 (MRAM)
3,565在途量
最低: 1
倍数: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 25 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 105 C MR25H40 Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 256Kb 3.3V 35ns 32Kx8 Parallel 磁阻随机存取存储器 (MRAM) 270库存量
最低: 1
倍数: 1

TSOP-II-44 Parallel 256 kbit 32 k x 8 8 bit 35 ns 3 V 3.6 V 25 mA, 55 mA - 40 C + 85 C MR256A08B Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 128Kb 3.3V 16Kx8 SPI 无库存交货期 26 周
最低: 1,140
倍数: 570

DFN-8 SPI 128 kbit 16 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 85 C MR25H128A Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 256Kb 3.3V 32Kx8 SPI 无库存交货期 26 周
最低: 1,140
倍数: 570

DFN-8 SPI 256 kbit 32 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 85 C MR25H256 Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 4Mb 3.3V 35ns 512Kx8 Parallel 磁阻随机存取存储器 (MRAM)
270预期 2027/1/8
最低: 1
倍数: 1

TSOP-II-44 Parallel 4 Mbit 512 k x 8 8 bit 35 ns 3 V 3.6 V 30 mA, 90 mA - 40 C + 125 C MR2A08A Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 4Mb 3.3V 35ns 256Kx16 Prallel 磁阻随机存取存储器 (MRAM) 无库存交货期 26 周
最低: 1
倍数: 1

BGA-48 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 85 C MR2A16A Tray
Everspin Technologies 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM) 无库存交货期 26 周
最低: 1
倍数: 1

TSOP-II-54 Parallel 16 Mbit 1 M x 16 16 bit 35 ns 3 V 3.6 V 60 mA, 152 mA 0 C + 70 C MR4A16B Tray