|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460BG
- Microchip Technology
-
1:
¥463.2887
-
68库存量
|
Mouser 零件编号
494-ARF460BG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
68库存量
|
|
|
¥463.2887
|
|
|
¥447.5817
|
|
|
¥382.731
|
|
|
¥321.8466
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
14 A
|
500 V
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
- ARF460AG
- Microchip Technology
-
1:
¥468.6675
-
85库存量
|
Mouser 零件编号
494-ARF460AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
|
|
85库存量
|
|
|
¥468.6675
|
|
|
¥396.5396
|
|
|
¥378.4257
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
14 A
|
500 V
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
- ARF463AP1G
- Microchip Technology
-
1:
¥372.4706
-
400库存量
|
Mouser 零件编号
494-ARF463AP1G
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
|
|
400库存量
|
|
|
¥372.4706
|
|
|
¥351.8707
|
|
|
¥351.6221
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
9 A
|
500 V
|
|
100 MHz
|
15 dB
|
100 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
- ARF461AG
- Microchip Technology
-
1:
¥489.8437
-
27库存量
|
Mouser 零件编号
494-ARF461AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
|
|
27库存量
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
6.5 A
|
1 kV
|
|
65 MHz
|
13 dB
|
150 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
NXP Semiconductors MHT1803B
- MHT1803B
- NXP Semiconductors
-
1:
¥341.2374
-
302库存量
-
寿命结束
|
Mouser 零件编号
771-MHT1803B
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 200MHZ TO-247-3L
|
|
302库存量
|
|
|
¥341.2374
|
|
|
¥276.8839
|
|
|
¥259.6853
|
|
|
¥255.1653
|
|
|
查看
|
|
|
¥240.8369
|
|
|
¥235.7067
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
300 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
- ARF463AG
- Microchip Technology
-
1:
¥342.6047
-
18库存量
-
30预期 2026/10/19
|
Mouser 零件编号
494-ARF463AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
|
|
18库存量
30预期 2026/10/19
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
9 A
|
500 V
|
|
100 MHz
|
15 dB
|
100 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300AN
- NXP Semiconductors
-
1:
¥760.1284
-
480预期 2026/7/9
-
寿命结束
|
Mouser 零件编号
771-MRF300AN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
480预期 2026/7/9
|
|
|
¥760.1284
|
|
|
¥637.659
|
|
|
¥567.147
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
- MHT1803A
- NXP Semiconductors
-
1:
¥339.4181
-
239预期 2026/10/1
-
寿命结束
|
Mouser 零件编号
771-MHT1803A
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
|
|
239预期 2026/10/1
|
|
|
¥339.4181
|
|
|
¥276.1946
|
|
|
¥257.7756
|
|
|
¥234.1586
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
|
|
|
1.8 MHz to 50 MHz
|
28.2 dB
|
330 W
|
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
- ARF466AG
- Microchip Technology
-
25:
¥541.7898
-
无库存
|
Mouser 零件编号
494-ARF466AG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
|
|
无库存
|
|
最低： 25
倍数： 1
|
|
|
|
Si
|
|
|
|
|
|
|
|
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
- ARF466BG
- Microchip Technology
-
25:
¥541.7898
-
无库存
|
Mouser 零件编号
494-ARF466BG
|
Microchip Technology
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
|
|
无库存
|
|
|
¥541.7898
|
|
|
¥479.007
|
|
|
查看
|
|
|
报价
|
|
最低： 25
倍数： 1
|
|
|
N-Channel
|
Si
|
13 A
|
1 kV
|
1 Ohms
|
45 MHz
|
16 dB
|
300 W
|
- 55 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300BN
- NXP Semiconductors
-
1:
¥759.5182
-
交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-MRF300BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
交货期 53 周
|
|
|
¥759.5182
|
|
|
¥632.8113
|
|
|
¥595.8038
|
|
|
¥562.7061
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 IXZR16N60 16A 600V N Channel ZMOS Switch MOSFET ISO Plus 247
- IXZR16N60
- ZiLOG
-
30:
¥231.9325
-
无库存
|
Mouser 零件编号
747-IXZR16N60
|
ZiLOG
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 IXZR16N60 16A 600V N Channel ZMOS Switch MOSFET ISO Plus 247
|
|
无库存
|
|
|
¥231.9325
|
|
|
¥204.8916
|
|
|
¥192.6424
|
|
最低： 30
倍数： 30
|
|
|
N-Channel
|
Si
|
18 A
|
600 V
|
530 mOhms
|
|
|
350 W
|
- 55 C
|
+ 175 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
