Wolfspeed / Cree CGHV600 6GHz GaN HEMT

科锐 CGHV600 6GHz 氮化镓(GaN) 高电子迁移率晶体管(HEMT)具有比硅(Si)或砷化镓(GaAs) 晶体管更出色的性能。CGHV600 GaN HEMT 具有更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。这些晶体管还具有更高的功率密度和更宽的带宽。CGHV600 系列设备适用于多种应用，包括蜂窝基础设施及 A 类、 AB 类及线性放大器。

The CGHV60040D and CGHV60075D5 6.0GHz GaN HEMTs are offered as bare die. The overall die size of the CGHV60040D is 820μm x 1800μm x 100μm. The overall die size of the CGHV60075D5 is 3000μm x 820μm x 100μm. 

应用

  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

特性

  • CGHV60040D
    • 18dB typical small-signal gain at 4GHz
    • 17dB typical small-signal gain at 6GHz
    •  
    • 65% typical power-added efficiency
    • 40W typical PSAT
    • 50V operation
    • High breakdown voltage
    • Up to 6GHz operation
    • 820μm x 1800μm x 100μm bare die
  • CGHV60075D5
    • 19dB typical small-signal gain at 4GHz
    • 17dB typical small-signal gain at 6GHz
    • 65% typical power-added efficiency
    • 75W typical PSAT
    • 50V operation
    • High breakdown voltage
    • Up to 6GHz operation
    • 3000μm x 820μm x 100μm bare die

应用

  • 2-way private radio
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A, AB, and linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms
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CGHV60040D Mechanical Drawing

机械图纸 - Wolfspeed / Cree CGHV600 6GHz GaN HEMT

CGHV60075D5 Mechanical Drawing

机械图纸 - Wolfspeed / Cree CGHV600 6GHz GaN HEMT
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