Wolfspeed / Cree 氮化镓高电子迁晶体管
科锐 与硅和砷化镓晶体管相比，氮化镓(GaN)高电子迁晶体管(HEMT)具有更高的功率密度和更宽的带宽。与硅或砷化镓相比，氮化镓具有出色的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。
For design flexibility, the Wolfspeed / Cree GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.
特性
- High efficiency
- High gain
- Wide bandwidth capabilities
- High breakdown voltage
- High saturated electron drift velocity
- High thermal conductivity.
应用
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
- Satellite Communications
- PTP Communications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel Traffic Services
- High-Efficiency Amplifiers
