Wolfspeed / Cree 基于氮化镓高电子迁移率晶体管的单片微波集成电路

科锐 基于氮化镓(GaN)高电子迁移率晶体管(HEMT)的单片微波集成电路(MMIC)在小占位尺寸封装中实现极宽的带宽。与硅或砷化镓相比，氮化镓具有出色的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。与硅和砷化镓晶体管相比，氮化镓高电子迁晶体管具有更高的功率密度和更宽的带宽。

特性

  • High efficiency
  • High gain
  • Wide bandwidth capabilities
  • High breakdown voltage
  • High saturated electron drift velocity
  • High thermal conductivity

应用

  • Radar
  • Broadband amplifiers
  • Satcom and point-to-point radio
  • Data link and tactical data link
  • Jamming amplifiers
  • Test equipment amplifiers
  • Marine radar

应用笔记

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Comparison Chart

图表 - Wolfspeed / Cree 基于氮化镓高电子迁移率晶体管的单片微波集成电路
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