Tube AEC-Q100 MOSFET

结果: 29
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
STMicroelectronics MOSFET Automotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a 1,032库存量
¥37.2222
¥22.7469
¥18.1139
¥15.2211
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 4.2 mOhms 20 V 4.5 V 117 nC - 55 C + 175 C 250 W Enhancement AEC-Q100 Tube

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3 529库存量
¥69.3142
¥46.4091
¥37.3013
¥33.0864
¥29.6173
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube
STMicroelectronics MOSFET N-Channel 40 V StripFET II Pwr Mos 845库存量
¥23.5718
¥15.5488
¥12.0797
¥10.0909
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 80 A 5 mOhms 20 V 2 V 150 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Tube

Infineon Technologies MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA 468库存量
¥149.8041
¥90.6599
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 45 mOhms 20 V 3 V 190 nC - 40 C + 150 C 431 W Enhancement AEC-Q100 CoolMOS Tube
STMicroelectronics MOSFET N-Ch 60 Volt 30 Amp 5,136库存量
¥17.3681
¥10.3395
¥8.0456
¥6.5314
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 30 A 40 mOhms 18 V 1 V 13 nC - 55 C + 175 C 70 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFET N-Ch 70V 35A OmniFET 3,020库存量
6,000在途量
¥43.7536
¥29.1992
¥26.555
¥25.7301
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 70 V 35 A 28 mOhms 3 V 100 nC - 55 C + 150 C 40 W Enhancement AEC-Q100 Tube
Infineon Technologies MOSFET N-Ch 650V 31.2A TO220-3 2,480库存量
¥64.1049
¥39.7873
¥34.4876
¥30.6004
¥27.1313
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 31.2 A 110 mOhms 20 V 3 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3
480预期 2027/7/22
¥76.5914
¥44.8271
¥37.7985
¥36.3973
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T 334库存量
¥61.5398
¥41.1885
¥33.1655
¥28.0353
¥26.3855
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 100 A 4.8 mOhms 20 V 4 V 135 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 OptiMOS Tube
Infineon Technologies MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2 495库存量
¥33.1655
¥16.8709
¥15.3002
¥12.4074
最低: 1
倍数: 1
Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 120 A 1.5 mOhms 20 V 3 V 176 nC - 55 C + 175 C 188 W Enhancement AEC-Q100 OptiMOS Tube
Infineon Technologies MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2 446库存量
¥29.7755
¥14.9725
¥13.56
¥10.9158
最低: 1
倍数: 1
Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 120 A 1.8 mOhms 20 V 3 V 134 nC - 55 C + 175 C 158 W Enhancement AEC-Q100 OptiMOS Tube

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3 178库存量
¥97.1913
¥70.3086
¥58.647
¥52.1947
¥49.381
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3 272库存量
¥76.7609
¥52.4433
¥43.2564
¥38.4652
¥35.9792
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube
STMicroelectronics MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI 605库存量
¥24.2385
¥14.0572
¥10.9158
¥8.8479
¥7.5484
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 80 A 4.3 mOhms 20 V 4 V 65 nC - 55 C + 175 C 110 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET 53库存量
13,000在途量
¥36.9736
¥21.8316
¥18.6111
¥16.1251
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 42 A 63 mOhms 20 V 3 V 90 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFET N-channel 75 V .0095 80A STripFet 2 684库存量
¥25.1425
¥12.4865
¥11.0853
¥9.0174
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 80 A 11 mOhms 20 V 2 V 160 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Tube
STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp 854库存量
1,000预期 2026/10/28
¥25.1425
¥12.4865
¥11.2548
¥9.0965
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 80 A 8 mOhms 20 V 4 V 112 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 STripFET Tube

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3 13库存量
480预期 2027/6/17
¥69.3142
¥41.4371
¥31.7643
¥29.6173
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 22.4A TO247-3 405库存量
¥48.0589
¥24.5662
¥19.5264
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22.4 A 150 mOhms 20 V 3.5 V 86 nC - 40 C + 150 C 195.3 W Enhancement AEC-Q100 CoolMOS Tube
STMicroelectronics MOSFET N-Ch 70V 20A OmniFET
7,357在途量
¥42.1829
¥25.4815
¥21.8316
¥20.2609
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 70 V 20 A 50 mOhms 3 V 60 nC - 55 C + 150 C 83 W Enhancement AEC-Q100 Tube

STMicroelectronics MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
257预期 2026/11/16
¥123.6559
¥85.6088
¥73.1223
¥68.2407
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 69 A 24 mOhms 25 V 4 V 203 nC - 55 C + 150 C 450 W Enhancement AEC-Q100 MDmesh Tube
STMicroelectronics MOSFET N Ch 40V 5.4mOhm 80A 643库存量
¥23.2441
¥14.9725
¥10.17
¥8.6897
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 80 A 6.2 mOhms 20 V 2 V 54 nC - 55 C + 175 C 110 W Enhancement AEC-Q100 STripFET Tube

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3
240预期 2027/4/29
¥96.5246
¥52.9405
¥49.381
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2 无库存交货期 12 周
¥22.9164
¥11.3339
¥10.17
¥8.136
最低: 1
倍数: 1
Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 80 A 3.3 mOhms 20 V 3 V 66 nC - 55 C + 175 C 94 W Enhancement AEC-Q100 OptiMOS Tube
Infineon Technologies MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms 无库存
¥51.2003
最低: 1,000
倍数: 1,000
Si Through Hole TO-262-3 N-Channel 1 Channel 40 V 270 A 2.3 mOhms 20 V 4 V 240 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 Tube