|
|
MOSFET Automotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a
- STP150N10F7AG
- STMicroelectronics
-
1:
¥37.2222
-
1,032库存量
|
Mouser 零件编号
511-STP150N10F7AG
|
STMicroelectronics
|
MOSFET Automotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a
|
|
1,032库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
110 A
|
4.2 mOhms
|
20 V
|
4.5 V
|
117 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
AEC-Q100
|
|
Tube
|
|
|
|
MOSFET N-Ch 650V 31.2A TO247-3
- IPW65R110CFDA
- Infineon Technologies
-
1:
¥69.3142
-
529库存量
|
Mouser 零件编号
726-IPW65R110CFDA
|
Infineon Technologies
|
MOSFET N-Ch 650V 31.2A TO247-3
|
|
529库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Channel 40 V StripFET II Pwr Mos
- STP150NF04
- STMicroelectronics
-
1:
¥23.5718
-
845库存量
|
Mouser 零件编号
511-STP150NF04
|
STMicroelectronics
|
MOSFET N-Channel 40 V StripFET II Pwr Mos
|
|
845库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
5 mOhms
|
20 V
|
2 V
|
150 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA
- IPW60R045CPA
- Infineon Technologies
-
1:
¥149.8041
-
468库存量
|
Mouser 零件编号
726-IPW60R045CPA
|
Infineon Technologies
|
MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA
|
|
468库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
60 A
|
45 mOhms
|
20 V
|
3 V
|
190 nC
|
- 40 C
|
+ 150 C
|
431 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 60 Volt 30 Amp
- STP36NF06L
- STMicroelectronics
-
1:
¥17.3681
-
5,136库存量
|
Mouser 零件编号
511-STP36NF06L
|
STMicroelectronics
|
MOSFET N-Ch 60 Volt 30 Amp
|
|
5,136库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
30 A
|
40 mOhms
|
18 V
|
1 V
|
13 nC
|
- 55 C
|
+ 175 C
|
70 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 70V 35A OmniFET
- VNP35N07-E
- STMicroelectronics
-
1:
¥43.7536
-
3,020库存量
-
6,000在途量
|
Mouser 零件编号
511-VNP35N07-E
|
STMicroelectronics
|
MOSFET N-Ch 70V 35A OmniFET
|
|
3,020库存量
6,000在途量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
70 V
|
35 A
|
28 mOhms
|
|
3 V
|
100 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
AEC-Q100
|
|
Tube
|
|
|
|
MOSFET N-Ch 650V 31.2A TO220-3
- IPP65R110CFDAAKSA1
- Infineon Technologies
-
1:
¥64.1049
-
2,480库存量
|
Mouser 零件编号
726-IPP65R110CFDAAKS
|
Infineon Technologies
|
MOSFET N-Ch 650V 31.2A TO220-3
|
|
2,480库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
110 mOhms
|
20 V
|
3 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 650V 43.3A TO247-3
- IPW65R080CFDAFKSA1
- Infineon Technologies
-
1:
¥76.5914
-
480预期 2027/7/22
|
Mouser 零件编号
726-IPW65R080CFDAFKS
|
Infineon Technologies
|
MOSFET N-Ch 650V 43.3A TO247-3
|
|
480预期 2027/7/22
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
43.3 A
|
72 mOhms
|
20 V
|
3.5 V
|
161 nC
|
- 40 C
|
+ 150 C
|
391 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T
- IPP100N10S3-05
- Infineon Technologies
-
1:
¥61.5398
-
334库存量
-
NRND
|
Mouser 零件编号
726-IPP100N10S305
NRND
|
Infineon Technologies
|
MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T
|
|
334库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.8 mOhms
|
20 V
|
4 V
|
135 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Tube
|
|
|
|
MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
- IPI120N04S4-01
- Infineon Technologies
-
1:
¥33.1655
-
495库存量
|
Mouser 零件编号
726-IPI120N04S4-01
|
Infineon Technologies
|
MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
|
|
495库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.5 mOhms
|
20 V
|
3 V
|
176 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Tube
|
|
|
|
MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
- IPI120N04S4-02
- Infineon Technologies
-
1:
¥29.7755
-
446库存量
|
Mouser 零件编号
726-IPI120N04S4-02
|
Infineon Technologies
|
MOSFET N-Ch 40V 120A I2PAK-3 OptiMOS-T2
|
|
446库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.8 mOhms
|
20 V
|
3 V
|
134 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Tube
|
|
|
|
MOSFET N-Ch 650V 63.3A TO247-3
- IPW65R048CFDA
- Infineon Technologies
-
1:
¥97.1913
-
178库存量
|
Mouser 零件编号
726-IPW65R048CFDA
|
Infineon Technologies
|
MOSFET N-Ch 650V 63.3A TO247-3
|
|
178库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
63.3 A
|
43 mOhms
|
20 V
|
3.5 V
|
270 nC
|
- 40 C
|
+ 150 C
|
500 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 650V 43.3A TO247-3
- IPW65R080CFDA
- Infineon Technologies
-
1:
¥76.7609
-
272库存量
|
Mouser 零件编号
726-IPW65R080CFDA
|
Infineon Technologies
|
MOSFET N-Ch 650V 43.3A TO247-3
|
|
272库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
43.3 A
|
72 mOhms
|
20 V
|
3.5 V
|
161 nC
|
- 40 C
|
+ 150 C
|
391 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
- STP120N4F6
- STMicroelectronics
-
1:
¥24.2385
-
605库存量
|
Mouser 零件编号
511-STP120N4F6
|
STMicroelectronics
|
MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI
|
|
605库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
4.3 mOhms
|
20 V
|
4 V
|
65 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET
- STP46NF30
- STMicroelectronics
-
1:
¥36.9736
-
53库存量
-
13,000在途量
|
Mouser 零件编号
511-STP46NF30
|
STMicroelectronics
|
MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET
|
|
53库存量
13,000在途量
在途量:
5,000 预期 2027/1/29
8,000 预期 2027/4/2
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
300 V
|
42 A
|
63 mOhms
|
20 V
|
3 V
|
90 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-channel 75 V .0095 80A STripFet 2
- STP76NF75
- STMicroelectronics
-
1:
¥25.1425
-
684库存量
|
Mouser 零件编号
511-STP76NF75
|
STMicroelectronics
|
MOSFET N-channel 75 V .0095 80A STripFet 2
|
|
684库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
75 V
|
80 A
|
11 mOhms
|
20 V
|
2 V
|
160 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 55 Volt 80 Amp
- STP80NF55-08
- STMicroelectronics
-
1:
¥25.1425
-
854库存量
-
1,000预期 2026/10/28
|
Mouser 零件编号
511-STP80NF55-08
|
STMicroelectronics
|
MOSFET N-Ch 55 Volt 80 Amp
|
|
854库存量
1,000预期 2026/10/28
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
8 mOhms
|
20 V
|
4 V
|
112 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 650V 31.2A TO247-3
- IPW65R110CFDAFKSA1
- Infineon Technologies
-
1:
¥69.3142
-
13库存量
-
480预期 2027/6/17
|
Mouser 零件编号
726-IPW65R110CFDAFKS
|
Infineon Technologies
|
MOSFET N-Ch 650V 31.2A TO247-3
|
|
13库存量
480预期 2027/6/17
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 650V 22.4A TO247-3
- IPW65R150CFDAFKSA1
- Infineon Technologies
-
1:
¥48.0589
-
405库存量
|
Mouser 零件编号
726-IPW65R150CFDAFKS
|
Infineon Technologies
|
MOSFET N-Ch 650V 22.4A TO247-3
|
|
405库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
22.4 A
|
150 mOhms
|
20 V
|
3.5 V
|
86 nC
|
- 40 C
|
+ 150 C
|
195.3 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 70V 20A OmniFET
- VNP20N07-E
- STMicroelectronics
-
1:
¥42.1829
-
7,357在途量
|
Mouser 零件编号
511-VNP20N07-E
|
STMicroelectronics
|
MOSFET N-Ch 70V 20A OmniFET
|
|
7,357在途量
在途量:
4,357 预期 2027/2/19
3,000 预期 2027/3/19
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
70 V
|
20 A
|
50 mOhms
|
|
3 V
|
60 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
AEC-Q100
|
|
Tube
|
|
|
|
MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
- STW78N65M5
- STMicroelectronics
-
1:
¥123.6559
-
257预期 2026/11/16
|
Mouser 零件编号
511-STW78N65M5
|
STMicroelectronics
|
MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
|
|
257预期 2026/11/16
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
24 mOhms
|
25 V
|
4 V
|
203 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
AEC-Q100
|
MDmesh
|
Tube
|
|
|
|
MOSFET N Ch 40V 5.4mOhm 80A
- STP95N4F3
- STMicroelectronics
-
1:
¥23.2441
-
643库存量
|
Mouser 零件编号
511-STP95N4F3
|
STMicroelectronics
|
MOSFET N Ch 40V 5.4mOhm 80A
|
|
643库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
6.2 mOhms
|
20 V
|
2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Tube
|
|
|
|
MOSFET N-Ch 650V 63.3A TO247-3
- IPW65R048CFDAFKSA1
- Infineon Technologies
-
1:
¥96.5246
-
240预期 2027/4/29
|
Mouser 零件编号
726-IPW65R048CFDAFKS
|
Infineon Technologies
|
MOSFET N-Ch 650V 63.3A TO247-3
|
|
240预期 2027/4/29
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
63.3 A
|
43 mOhms
|
20 V
|
3.5 V
|
270 nC
|
- 40 C
|
+ 150 C
|
500 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2
- IPI80N04S4-03
- Infineon Technologies
-
1:
¥22.9164
-
无库存交货期 12 周
|
Mouser 零件编号
726-IPI80N04S4-03
|
Infineon Technologies
|
MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T2
|
|
无库存交货期 12 周
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
3.3 mOhms
|
20 V
|
3 V
|
66 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Tube
|
|
|
|
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
- AUIRF2804L
- Infineon Technologies
-
1,000:
¥51.2003
-
无库存
-
NRND
|
Mouser 零件编号
942-AUIRF2804L
NRND
|
Infineon Technologies
|
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
|
|
无库存
|
|
最低: 1,000
倍数: 1,000
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
40 V
|
270 A
|
2.3 mOhms
|
20 V
|
4 V
|
240 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
|
Tube
|
|