Tube MOSFET

结果: 5,035
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET IFX FET >80 - 100V 4,820库存量
400在途量
¥59.1442
¥31.5948
¥28.9506
¥27.5494
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 100 V 203 A 1.7 mOhms 20 V 3.8 V 168 nC - 55 C + 175 C 341 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET 169库存量
1,200在途量
¥58.4775
¥39.1206
最低: 1
倍数: 1
最大: 50
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 84 A 28 mOhms 30 V 4.2 V 164 nC - 55 C + 150 C 481 W Enhancement Tube
IXYS MOSFET Trench T2 HiperFET Power MOSFET 945库存量
3,510在途量
¥215.8865
¥152.1997
¥140.12
¥138.7188
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 446库存量
¥154.4258
¥89.0892
¥88.9988
¥82.716
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 66A N-CH MOSFET 974库存量
¥41.8552
¥21.8316
¥19.8541
¥19.0292
最低: 1
倍数: 1
Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 66 A 165 mOhms 30 V 6 V 33 nC - 55 C + 150 C 65 W Enhancement Tube
ROHM Semiconductor MOSFET TO247 650V 258A N-CH MOSFET 487库存量
¥105.1352
¥59.2233
¥56.4096
最低: 1
倍数: 1
Si Through Hole TO-247G-3 N-Channel 1 Channel 600 V 258 A 44 mOhms 30 V 6 V 110 nC - 55 C + 150 C 781 W Enhancement Tube
onsemi MOSFET SuperFET3 650V 99 mOhm 11,052库存量
¥57.2345
¥30.7699
¥28.1257
¥27.3799
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 85 mOhms 30 V 2.5 V 57 nC - 55 C + 150 C 43 W Enhancement Tube
onsemi MOSFET 600V 11A N-CH 8,169库存量
¥36.9736
¥19.1083
¥19.0292
¥16.046
¥15.7183
最低: 1
倍数: 1
最大: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 380 mOhms 30 V 5 V 40 nC - 55 C + 150 C 36 W Enhancement Tube

onsemi MOSFET Single N-Ch 500V .12Ohm SMPS 6,472库存量
¥86.1851
¥57.3249
¥50.9517
最低: 1
倍数: 1
最大: 450
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 44 A 120 mOhms 30 V 2 V 108 nC - 55 C + 175 C 750 W Enhancement Tube
onsemi MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE 12,224库存量
¥24.6453
¥14.3962
¥12.0797
¥10.7576
¥10.0909
最低: 1
倍数: 1
最大: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 530 mOhms 30 V 5 V 34 nC - 55 C + 150 C 39 W Enhancement UniFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,488库存量
¥226.6441
¥148.4707
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO264 150V 400A N-CH 4CLASS 1,487库存量
¥575.3734
¥471.6507
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube

onsemi MOSFET SUPERFET3 650V 9,448库存量
¥76.5123
¥41.358
¥40.2054
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 110 mOhms 30 V 3 V 58 nC - 55 C + 150 C 240 W Enhancement Tube
ROHM Semiconductor MOSFET Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching. 1,869库存量
¥36.6459
¥18.7806
¥17.0404
¥13.9781
最低: 1
倍数: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 66 A 165 mOhms 30 V 6 V 33 nC - 55 C + 150 C 205 W Enhancement Tube
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 4,286库存量
¥54.5903
¥38.1375
¥34.0017
¥31.0185
¥30.6004
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 290 mOhms 30 V 3 V 54 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube

onsemi MOSFET SprFET2 650V 190mohm FRFET TO247 longlea 5,921库存量
¥62.1161
¥33.6627
¥31.4366
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 20.6 A 168 mOhms 30 V 5 V 60 nC - 55 C + 150 C 208 W Enhancement SuperFET II Tube
onsemi MOSFET 500V 20A NCH MOSFET 7,176库存量
¥42.1829
¥22.0011
¥19.3569
¥18.532
最低: 1
倍数: 1
最大: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 230 mOhms 30 V 3 V 59.5 nC - 55 C + 150 C 38.5 W Enhancement Tube
onsemi MOSFET 1000V N-Channe MOSFET 10,686库存量
¥44.6689
¥27.7076
¥25.5606
最低: 1
倍数: 1
最大: 450
Si Through Hole TO-3PN-3 N-Channel 1 Channel 1 kV 8 A 1.45 Ohms 30 V 3 V 70 nC - 55 C + 150 C 225 W Enhancement QFET Tube

Infineon Technologies MOSFET HIGH POWER_NEW 2,296库存量
¥107.4517
¥59.551
¥56.8277
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 34 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
IXYS MOSFET 250V/170A Ultra Junc tion X3-Class MOSFE 1,463库存量
¥214.3949
¥152.1997
¥140.1991
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 170 A 6.1 mOhms 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube


IXYS MOSFET ISOPLUS 4.7KV 2A N-CH HIVOLT 256库存量
¥1,244.8758
¥968.8507
最低: 1
倍数: 1
Si Through Hole ISOPLUS-i5-PAK-3 N-Channel 1 Channel 4.7 kV 2 A 20 Ohms 20 V 3.5 V 180 nC - 55 C + 150 C 220 W Enhancement ISOPLUS i5-PAC Tube
IXYS MOSFET -10.0 Amps -500V 1.000 Rds 5,309库存量
¥64.0258
¥44.748
¥40.3636
¥36.9736
最低: 1
倍数: 1
Si Through Hole TO-220-3 P-Channel 1 Channel 500 V 10 A 1 Ohms 20 V 2 V 50 nC - 55 C + 150 C 300 W Enhancement PolarP Tube
Infineon Technologies MOSFET MOSFT 55V 98A 8mOhm 97.3nC 68,943库存量
¥17.2099
¥10.8367
¥9.266
¥7.4015
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 110 A 8 mOhms 20 V 2 V 97.3 nC - 55 C + 175 C 200 W Enhancement Tube
ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive) 1,721库存量
¥40.7817
¥21.0971
¥19.1083
¥15.7974
¥15.7183
最低: 1
倍数: 1
Si Through Hole TO-220AB-3 N-Channel 1 Channel 100 V 80 A 8.4 mOhms 20 V 4 V 38 nC - 55 C + 150 C 89 W Enhancement Tube
Vishay Semiconductors MOSFET N-CHANNEL 600V 4,218库存量
¥54.7598
¥29.0297
¥26.555
¥23.4136
最低: 1
倍数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 80 mOhms 30 V 5 V 63 nC - 55 C + 150 C 227 W Enhancement Tube