Diodes Incorporated MMBFx N 通道增强模式 MOSFET
Diodes Inc. MMBFx N 通道增强模式 MOSFET 设计用于最大限度地减少导通电阻 (RDS(ON))，并保持卓越的开关性能。 MMBFx MOSFET 提供低栅极阈值电压、输入电容以及输入/输出漏电流。 这些 MOSFET 非常适合用于高效率电源管理应用。 相关应用包括电源管理功能和 模拟 开关。
特性
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Lead-free and fully RoHS compliant
- Halogen and Antimony free green device
- AEC-Q101 qualified standards for high reliability
- PPAP Capable
规范
- Materials
- SOT23 case
- Molded plastic case material
- 94V-0 UL flammability classification rating
- Level 1 per J-STD-020 moisture sensitivity
- Matte tin finish annealed over alloy 42 lead frame (Lead-Free Plating) terminals
- 0.008g weight (approximate)
- Ratings
- 60V drain-source voltage
- 60V drain-gate voltage
- 417K/W thermal resistance
- Thermal
- -55°C to +150°C operating and storage temperature range
- Electrical
- 70V typical drain-source breakdown voltage
- 1.0µA drain current
- 40pF maximum input capacitance
- 30pF maximum output capacitance
- 5.0pF maximum reverse transfer capacitance
- 10ns maximum turn-on/turn-off time
发布日期: 2016-05-02
| 更新日期: 2022-03-11