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Central Semiconductor GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.

Features

  • High voltage capability (650V)
  • Low gate charge and rDS(ON) (as low as 3.2mΩ)
  • Efficient, fast switching
  • Space-saving DFN and CSP
  • Also available as bare die
  • Minimal power loss in conduction
  • High-frequency switching capability
  • No reverse recovery losses

Applications

  • Wireless charging (high power)
    • Defense/aerospace
    • Healthcare
    • Consumer
  • Power Factor Correction (PFC)
  • Electric vehicle inverters
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物料编号 数据表 Id-连续漏极电流 Qg-栅极电荷 Rds On-漏源导通电阻 Pd-功率耗散 Vds-漏源极击穿电压 Vgs th-栅源极阈值电压 Vgs - 栅极-源极电压 典型关闭延迟时间 典型接通延迟时间 技术 封装 / 箱体 RoHS - 贸泽
CDFG6558N TR13 PBFREE CDFG6558N TR13 PBFREE 数据表 29 A 6.2 nC 80 mOhms 650 V 2.5 V - 6 V, + 7 V 5 ns 3 ns GaN DFN-8 Y
CCSPG1510N TR PBFREE CCSPG1510N TR PBFREE 数据表 100 A 20 nC 3.9 mOhms 200 mW 150 V 2.1 V - 4 V, + 6 V GaN CSP-25 Y
CCSPG1560N TR PBFREE CCSPG1560N TR PBFREE 数据表 60 A 13 nC 7 mOhms 200 mW 150 V - 4 V, + 6 V GaN CSP-25 Y
CDF56G7032N TR13 PBFREE CDF56G7032N TR13 PBFREE 数据表 18 A 3.5 nC 140 mOhms 113 W 700 V 2.5 V - 6 V, + 7 V 4 ns 3 ns GaN DFN-8 Y
CCSPG1060N TR PBFREE CCSPG1060N TR PBFREE 数据表 60 A 9.2 nC 5.5 mOhms 1.1 W 100 V 2.5 V - 4 V, + 6 V GaN CSP-8 Y
CDF56G6511N TR13 PBFREE CDF56G6511N TR13 PBFREE 数据表 11.5 A 2.8 nC 190 mOhms 84 W 650 V 2.5 V - 1.4 V, + 7 V 1.7 ns 1.4 ns GaN DFN-8 Y
CDF56G6517N TR13 PBFREE CDF56G6517N TR13 PBFREE 数据表 17 A 3.5 nC 140 mOhms 113 W 650 V 2.5 V - 1.4 V, + 7 V 4 ns 3 ns GaN DFN-8 Y
发布日期: 2023-10-27 | 更新日期: 2024-09-09