Diodes Incorporated DMP32D P沟道MOSFET

Diode Incorporated DMP32D P沟道MOSFET设计用于最大限度地降低导通电阻RDS(ON) ,并保持卓越的开关性能。 该MOSFET的工作温度范围为-55ºC至150ºC。  DMP32D P沟道MOSFET采用SMD/SMT安装方式和卷带封装。 DMP32D MOSFET 非常适合 用于高效率电源管理 应用。

特性

  • Low on-resistance
  • Ultra-small surface mount package
  • ESD protected gate
  • Lead-free and RoHS compliant
  • Halogen and Antimony free - green device
  • AEC-Q101 standards for high-reliability

规范

  • Drain-source breakdown voltage (Vds) of -30V
  • Continuous drain current of -400mA
  • Drain-source resistance RDS(ON) of 2.4
  • Gate-source voltage (Vgs) of ± 25V
  • Power dissipation of 500mW
  • Typical turn-off delay time is 31.9ns
  • Typical turn-on delay time is 4.3ns

应用

  • Load switch
  • Portable applications
  • Power management applications
发布日期: 2017-05-12 | 更新日期: 2022-03-11