Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode
Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode offers a repetitive peak reverse voltage rating of 1200V and a forward current capability of 2A. This diode features a low capacitive charge, extremely fast switching, forward voltage of approximately 1.4V. The SI02C120SMA Schottky diode exhibits very low leakage current up to 2μA and low junction capacitance up to 112pF. This diode is housed in a compact DO‑214AC (SMA) surface-mount package. The SI02C120SMA Schottky diode operates over a wide junction temperature range from -55°C to +175°C, making it reliable in harsh environmental conditions and demanding power applications. Typical applications include rectification of high frequencies, high-efficient switching stages, power factor correction diodes, free-wheeling diodes for inverters, and commercial/industrial grade.
Features
- Low capacitive charge
- Extremely fast switching
- High reverse voltage
- High power dissipation
- RoHS compliant
Applications
- Rectification of high frequencies
- High efficient switching stages
- Power factor correction diodes
- Free-wheeling diodes for inverters
- Commercial/industrial grade
Specifications
- 1200V repetitive peak reverse voltage
- Leakage current:
- 1μA (TJ=25°C)
- 2μA (TJ=175°C)
- 2A forward current
- 1.4V forward voltage
- Junction capacitance:
- 112pF (VR=0V)
- 17pF (VR=400V)
- 14pF (VR=800V)
- 3k/W thermal resistance junction to case
- 55°C to +175°C junction temperature range
Dimension Diagram
