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Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 

The Everspin Technologies MR4A16B is organized as 1,048,576 words of 16 bits. For both MRAM devices, data is non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. 

The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10mm x 10mm, 48pin ball grid array (BGA) package with 0.75mm ball centers. The MR4A16B is available in small footprint 48pin ball grid array (BGA) package and a 54-pin Thin Small Outline Package (TSOPII). 

Both products provide highly reliable data storage over a wide range of temperatures. They are offered with commercial temperature (0 to 70°C), industrial temperature (-40 to 85°C), and automotive temperature (-40 to 125°C) range options.

Features

  • +3.3V power supply
  • Fast 35ns read/write cycle
  • SRAM compatible timing
  • Unlimited read and write endurance
  • Data always non-volatile for >20 years at a temperature
  • RoHS-compliant small footprint BGA and TSOP package

Block Diagrams

Block Diagram - Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs
Block Diagram - Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Associated Products

Everspin Technologies Magnetoresistive Random Access Memory (MRAM)

Delivers significantly long data retention of >20 years and unlimited endurance.

Learn More关于Everspin Technologies Magnetoresistive Random Access Memory (MRAM) View Products与Everspin Technologies Magnetoresistive Random Access Memory (MRAM)相关
View Results ( 19 ) Page
物料编号 数据表 系列 描述
MR4A16BMA35 MR4A16BMA35 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
MR4A08BCMA35 MR4A08BCMA35 数据表 MR4A08B 磁阻随机存取存储器 (MRAM) 16MB 3.3V 35ns 2Mx8 Parallel 磁阻随机存取存储器 (MRAM)
MR4A08BUYS45 MR4A08BUYS45 数据表 MR4A08B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 45ns 2Mx8 Parallel 磁阻随机存取存储器 (MRAM)
MR4A16BCMA35 MR4A16BCMA35 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
MR4A16BUYS45 MR4A16BUYS45 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 45ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
MR4A16BUYS45R MR4A16BUYS45R 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 45ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
MR4A08BCYS35 MR4A08BCYS35 数据表 MR4A08B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 2Mx8 Parallel 磁阻随机存取存储器 (MRAM)
MR4A08BYS35 MR4A08BYS35 数据表 MR4A08B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 2Mx8 Parallel 磁阻随机存取存储器 (MRAM)
MR4A16BCYS35 MR4A16BCYS35 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
MR4A16BCYS35R MR4A16BCYS35R 数据表 MR4A16B 磁阻随机存取存储器 (MRAM) 16Mb 3.3V 35ns 1Mx16 Parallel 磁阻随机存取存储器 (MRAM)
发布日期: 2011-08-02 | 更新日期: 2022-03-11