Infineon Technologies MirrorBit Eclipse 闪存
Cypress / S29GL512GT MirrorBit® Eclipse™ 闪存具有 15ns 的快速页面访问时间。 相应的随机存取时间快达 100ns。 它具有写入缓冲器，可在一次操作中最多编程 256 字/512 字节。 因此，有效编程时间比标准编程算法更快。 这一特性使得这些器件非常适合用于当今需要更高密度、更佳性能和更低功耗的嵌入式应用。
特性
- 45nm MIRRORBIT Eclipse technology
- Single supply (VCC) for read/program/erase (2.7V to 3.6V)
- Wide I/O voltage range (VIO): 1.65V to VCC
- x8/x16 data bus
- Asynchronous 32-byte page read
- Programming in page multiples, up to a maximum of 512-bytes
- Single word and multiple programs on the same word options
- Sector erase in uniform 128kB sectors
- Suspend and resume commands for program and erase operations
- Advanced sector protection
- Status register, data polling, and ready/busy pin methods to determine device status
- Separate 2048-byte one-time program array
- Temperature range: (-40°C to +85°C)
- Package options:
- 56-pin TSOP
- 64-ball Ball Grid Array, 13mm x 11mm
- Density options:
- 512MB
- 1GB
应用
- Automotive instrument clusters
- Automotive infotainment systems
- Hand-held displays
- Digital cameras
- Projectors
- Medical diagnostic equipment
- Factory automation
- Home automation appliances
Additional Resource
发布日期: 2016-06-28
| 更新日期: 2023-04-25