Infineon Technologies OptiMOS™ 快速二极管 (FD) 功率 MOSFET
Infineon OptiMOS™ 快速二极管 (FD) 器件是 Infineon 最新一代的 N 沟道功率 MOSFET,有 200V 和 250V 可选。这些 Infineon OptiMOS FD 器件具有较小 Q
rr、非常低的导通电阻、175ºC 的工作温度。这些 Infineon OptiMOS FD MOSFET 针对体二极管硬整流进行了优化,是电信、工业电源、D 类音频放大器、电机控制、直流-交流转换器等应用的理想选择。
特性
- N-channel, normal level
- Fast diode (FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Low ON-resistance RDS(on)
- 175°C maximum operating temperature
- Pb-free lead plating, RoHS compliant
- Qualified, according to JEDEC for target application
- Halogen free, according to IEC61249-2-21
应用
- Telecom
- Class D audio amplifiers
- Motor control for 48-110V systems
- Industrial power supplies
- DC/AC inverters
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Ultra low gate and output charges with lowest on state resistance in small footprint packages.
发布日期: 2014-06-02
| 更新日期: 2022-03-11