ISSI IS29GL256 Parallel Flash Memory Devices

ISSI IS29GL256 Parallel Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The ISSI IS29GL256 devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.

Features

8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming time for multiple-word updates
Secured Silicon Sector (SSR) region
- 512-word/1024-byte sector for permanent, secure identification
- 256-word Factory Locked SSR and 256-word customer-locked SSR
Uniform 64Kword/128KByte sector architecture
Suspend and resume commands for the program and erase operations
Write operation status bits to indicate the program and erase operation completion

Support for Common Flash Interface (CFI)
Volatile and non-volatile methods of advanced sector protection
WP#/ACC input
Accelerates programming time (when V_HH is applied) for greater throughput during system production
Protects first or the last sector regardless of sector protection settings
Hardware reset input (RESET#) resets the device
Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Minimum 100K program/erase endurance cycles

Specifications

Single power supply operation
- 2.7V to 3.6V full voltage range for reading and write operations
Fast access time at -40°C to +125°C
- 70ns at a V_CC range from 3V to 3.6V and V_IO range from 3V to 3.6V
- 1.65V to 3.6V V_IO input/output
- All input levels (address, control, and DQ input levels) and outputs are determined by the voltage on V_IO input