Micro Commercial Components (MCC) MCTL High-Power N-Channel MOSFETs

Micro Commercial Components (MCC) MCTL High-Power N-Channel MOSFETs are designed based on the Split-Gate Trench (SGT) technology and are 30% smaller than traditional D-PAK 7-pin options. These MOSFETs withstand currents up to 300A and reduce the need for parallel MOSFETs in high-current applications. The MCTL MOSFETs offer excellent EMI performance, high-power density, high reliability, high voltage, and high-density cell design for low RDS(ON). Typical applications include load switches, welding equipment, PV/solar inverters, DC-DC converters, telecom devices, network security appliances, telecommunications test equipment, and industrial power supplies.

The MCTL MOSFETs feature temperature stability, fast switching speed, low profile footprint, and low parasitic and package inductances. These operate from -55°C to 150°C junction operating temperature range and are available in a TO-Leadless-8L (TOLL-8L) package. The MCTL MOSFETs comply with RoHS, Moisture Sensitivity Level 1 (MSL 1), and UL 94V-0 flammability rating standards. 

Features

  • Split-Gate Trench (SGT) technology
  • High reliability
  • High power density
  • High gate voltage
  • Low RDS(ON)
  • High-density cell design
  • Excellent EMI performance
  • High current capability
  • Reduced systems costs
  • Fast switching speed
  • Temperature stability
  • Robustness
  • Enhanced design options
  • Compact design
  • RoHS compliant
  • Epoxy meets UL 94V-0 flammability rating
  • Halogen and lead-free

Applications

  • Industrial:
    • Motor drives
    • Load switches
    • Welding equipment
    • Automation
    • Uninterruptible Power Supplies (UPS)
  • Renewable energy:
    • PV/solar inverters
    • Battery management systems
    • DC-DC converters
  • Communications and networking
    • Telecom devices
    • Network security appliances
    • Network storage systems
    • Telecommunications test equipment
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物料编号 数据表 Vgs th-栅源极阈值电压 Pd-功率耗散 Qg-栅极电荷 Vgs - 栅极-源极电压 Id-连续漏极电流 Vds-漏源极击穿电压 Rds On-漏源导通电阻 最大工作温度 典型关闭延迟时间 典型接通延迟时间 上升时间 下降时间
MCTL160N15Y-TP MCTL160N15Y-TP 数据表
MCTL270N04Y-TP MCTL270N04Y-TP 数据表
MCTL295N06Y-TP MCTL295N06Y-TP 数据表 4 V 313 W 108 nC - 20 V, 20 V 295 A 60 V 2 mOhms + 150 C 172 ns 33 ns 69 ns 105 ns
MCTL300N10YB-TP MCTL300N10YB-TP 数据表
MCTL4D0N15YH-TP MCTL4D0N15YH-TP 数据表
发布日期: 2023-10-05 | 更新日期: 2025-04-22