Nexperia BUKx 汽车用MOSFET
恩智浦 BUKx 汽车用 MOSFET 是采用 TrenchMOS 技术的逻辑电平 N 沟道 MOSFET。该产品设计符合 AEC Q101 标准，用于高性能汽车应用。
特性
- AEC-Q101 compliant
- Repetitive avalanche rated
- Enhancement channel mode
- N-channel transistor polarity
- TrenchMOS technology
- 1- to 2-channels
- Single or dual configuration
- Suitable for thermally demanding environments due to +175°C rating
- Multiple package/case options
应用
- 12V automotive systems
- Motors, lamps, and solenoid control
- Start-stop micro-hybrid applications
- Transmission control
- Ultra-high performance power switching
规范
- 30V to 100V drain-source breakdown voltage range
- 1.4V to 3V gate-source threshold voltage range
- 32W to 357W power dissipation range
- 1.97mΩ to 98mΩ on-drain-source resistance range
- 10nC to 169nC gate charge range
- 11.8A to 120A continuous drain current range
- ±10V, -10V/+16V, ±15V, and ±20V gate-source voltage options
- -55°C to +175°C operating temperature range
视频
Additional Resources
发布日期: 2013-04-08
| 更新日期: 2025-04-07