特性
- Specified from -40°C to +125°C
- Low RDSon
- Eight Power EDNMOS transistor outputs of 100mA continuous current
- 250mA current limit capability
- Output clamping voltage 33V
- 30mJ avalanche energy capability
- Enhanced cascading for multiple stages
- All registers cleared with single input
- Low power consumption
- ESD protection
- HBM JDS-001 Class 2 exceeds 2500V
- CDM JESD22-C101E exceeds 1000V
应用
- LED sign
- Graphic status panel
- Fault status indicator
发布日期: 2014-11-21
| 更新日期: 2023-03-17

