Nexperia PSMN MOSFETs in LFPAK Package
Nexperia PSMN MOSFETs in LFPAK Package are logic level N-channel devices in an LFPAK package qualified to 150°C. These MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The PSMN MOSFETs in LFPAK feature advanced TrenchMOS architecture for low RDSon and low gate charge. These PSMN MOSFETs in LFPAK also provide high-efficiency gains in switching power converters.
Features
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
- Advanced TrenchMOS provides low RDSon and low gate charge
- LFPAK provides maximum power density in a Power SO8 package
Applications
- DC-DC converters
- Motor control
- Server power supplies
- Load switch
- Lithium-ion battery protection
View Results ( 9 ) Page
| 物料编号 | 数据表 | Rds On-漏源导通电阻 | Id-连续漏极电流 | Pd-功率耗散 |
|---|---|---|---|---|
| PSMN5R0-30YL,115 |  |
5 mOhms | 91 A | 61 W |
| PSMN2R0-30YL,115 | |
2 mOhms | 100 A | 97 W |
| PSMN3R0-30YL,115 | |
3 mOhms | 100 A | 81 W |
| PSMN7R0-30YL,115 | |
7 mOhms | 76 A | 51 W |
| PSMN1R7-30YL,115 | |
1.7 mOhms | 100 A | 109 W |
| PSMN2R5-30YL,115 | |
2.5 mOhms | 100 A | 88 W |
| PSMN3R5-30YL,115 | |
3.5 mOhms | 100 A | 74 W |
| PSMN4R0-30YL,115 | |
4 mOhms | 100 A | 69 W |
| PSMN6R0-30YL,115 | |
6 mOhms | 79 A | 55 W |
发布日期: 2010-01-26
| 更新日期: 2022-03-11