onsemi GaNEXUS™ GaN FETs
onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties to provide fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications with low to medium, high, and ultra-high voltage. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.
Features
- Fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors
- Lower switching losses
- Higher power density for smaller magnetics, compact designs, and greater integration
- Improved thermal performance
- Voltage range from 40V to 650V and 650V
- Integrated protection features
- High-frequency performance offers faster switching for advanced conversion stages
- Thermally enhanced packages
- Industry-standard footprints for dual sourcing
- Made for deployment-ready systems
Applications
- Automotive electrification
- Industrial automation
- AI data center and cloud infrastructure
- Physical AI, robotics, and industrial power
- Energy infrastructure
GaN Power Conversion Architecture
