onsemi NXH011F120M3F2 SiC MOSFETs
onsemi NXH011F120M3F2 EliteSiC SiC MOSFET Modules is equipped with an 11mΩ/1200V SiC M3S MOSFET full-bridge configuration. The modules integrate a thermistor and an HPS DBC in an F2 package, enabling compact, high-efficiency power-conversion designs. The onsemi NXH011F120M3F2 offers two types of pre-applied thermal interface material and one without pre-applied TIM. The modules also feature press-fit pins and Pb-free, halide-free, and RoHS-compliant construction for power module integration.
The modules are excellent for solar inverters, uninterruptible power supplies, EV charging stations, and industrial power applications. The full-bridge topology, 1200V SiC MOSFET rating, thermistor connections, and Kelvin source pin support make the NXH011F120M3F2 an ideal option for demanding power electronics platforms.
Features
- 11mΩ/1200V M3S SiC MOSFET full-bridge power module
- Integrated thermistor for temperature monitoring
- HPS DBC construction for power module designs
- Press-fit pins for module connection
- Options with two types of pre-applied thermal interface material and without pre-applied TIM
- Pb-free, halide-free, and RoHS-compliant construction
Applications
- Solar inverter
- Uninterruptible power supplies
- Electric vehicle charging stations
- Industrial power
Specifications
- Continuous drain current of 105A at TC = 80°C and TJ = 175°C
- Pulsed drain current of 316A at TJ = 175°C
- Maximum power dissipation of 244W at TJ = 175°C
- Storage temperature range of -40°C to +150°C
- Operating junction temperature range of -40°C to +175°C
- Package
- F2 package
- PIM34 case with press-fit construction
- Case size of 56.7mm x 42.5mm
- Drain-source voltage of 1200V
- Gate-source voltage range of +22V to -10V
- Pin functions
- TH1 and TH2 thermistor connections
- AC1 and AC2 center points of the full bridge
- DC+ positive bus connection and DC- negative bus connections
- Gate and Kelvin source connections for high-side and low-side switches
Eval Board
onsemi EVBUM2878G-EVB 评估板
设计用于评估1200 V个采用F2封装的M3S全桥4-PACK模块。
Additional Resources
Schematic
