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MOSFET模块 Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
- NXH011F120M3F2P1THG
- onsemi
-
1:
¥1,222.9538
-
20预期 2026/11/24
-
新产品
|
Mouser 零件编号
863-011F120M3F2P1THG
新产品
|
onsemi
|
MOSFET模块 Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
|
|
20预期 2026/11/24
|
|
最低： 1
倍数： 1
最大： 2
|
|
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SiC
|
Press Fit
|
N-Channel
|
4 Channel
|
1.2 kV
|
105 A
|
16 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
244 W
|
Tray
|
|
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MOSFET模块 Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
- NXH011T120M3F2P1THG
- onsemi
-
1:
¥1,099.2979
-
20预期 2026/11/24
-
新产品
|
Mouser 零件编号
863-011T120M3F2P1THG
新产品
|
onsemi
|
MOSFET模块 Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
|
|
20预期 2026/11/24
|
|
最低： 1
倍数： 1
最大： 2
|
|
|
SiC
|
Press Fit
|
N-Channel
|
4 Channel
|
1.2 kV
|
91 A
|
16 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
272 W
|
Tray
|
|
|
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MOSFET模块 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
- NXH015F120M3F1P1TG
- onsemi
-
1:
¥617.2286
-
28预期 2026/10/13
-
新产品
|
Mouser 零件编号
863-H015F120M3F1P1TG
新产品
|
onsemi
|
MOSFET模块 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
|
|
28预期 2026/10/13
|
|
最低： 1
倍数： 1
最大： 3
|
|
|
SiC
|
Press Fit
|
N-Channel
|
4 Channel
|
1.2 kV
|
77 A
|
19 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
198 W
|
Tray
|
|
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MOSFET模块 EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH006P120M3F1PG
- onsemi
-
1:
¥601.3408
-
28预期 2027/2/16
-
新产品
|
Mouser 零件编号
863-NXH006P120M3F1PG
新产品
|
onsemi
|
MOSFET模块 EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
|
|
28预期 2027/2/16
|
|
最低： 1
倍数： 1
最大： 3
|
|
|
SiC
|
Press Fit
|
N-Channel
|
2 Channel
|
1.2 kV
|
200 A
|
9 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
333 W
|
Tray
|
|
|
|
MOSFET模块 EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH006P120M3F1PNG
- onsemi
-
1:
¥667.0164
-
28预期 2027/2/16
-
新产品
|
Mouser 零件编号
863-XH006P120M3F1PNG
新产品
|
onsemi
|
MOSFET模块 EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
|
|
28预期 2027/2/16
|
|
最低： 1
倍数： 1
最大： 3
|
|
|
SiC
|
Press Fit
|
N-Channel
|
2 Channel
|
1.2 kV
|
240 A
|
9 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
500 W
|
Tray
|
|
|
|
MOSFET模块 EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
- NXH008P120M3F1PNG
- onsemi
-
1:
¥663.9654
-
28预期 2027/2/16
-
新产品
|
Mouser 零件编号
863-XH008P120M3F1PNG
新产品
|
onsemi
|
MOSFET模块 EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
|
|
28预期 2027/2/16
|
|
最低： 1
倍数： 1
最大： 3
|
|
|
SiC
|
Press Fit
|
N-Channel
|
2 Channel
|
1.2 kV
|
145 A
|
10.9 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
- 40 C
|
+ 175 C
|
382 W
|
Tray
|
|
