新款绝缘栅双极晶体管(IGBT)

STMicroelectronics STGI15C60S 3-Phase Inverter and IGBT SLLIMM is a small, low-loss, intelligent molded module (SLLIMM) that provides a high-performance AC motor drive in a simple, smaller, and rugged design. It combines ST's proprietary control ICs (one LS and one HS driver) with a short-circuit-rugged trench-gate field-stop (TFS) IGBT, making it ideal for motor drives operating up to 20kHz in hard-switching circuitry.
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STMicroelectronics STGI15C60S 3-Phase Inverter & IGBT SLLIMMThis device is ideal for motor drives operating up to 20kHz in hard-switching circuitry.2026/8/19 -
Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7分立晶体管DTO247封装,替代并联连接的多个TO247封装低电流晶体管。2025/12/1 -
onsemi AFGB30T65RQDN IGBT兼具高品质因数及低导通损耗和低开关损耗。2025/11/19 -
onsemi AFGBG70T65SQDC N沟道场截止IV IGBT该器件性能优异,具有低导通损耗和低开关损耗。2025/10/13 -
onsemi AFGH4L60T120RWx-STD N沟道场截止VII IGBT该器件性能优异,具备低通态电压与低开关损耗。2025/10/13 -
STMicroelectronics STGWA30IH160DF2 1600V IH2系列IGBT采用先进、专有的沟槽式栅极场终止型结构打造。2025/5/22 -
STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT(带二极管)在半桥拓扑中集成了2个IGBT和二极管。2024/12/24 -
ROHM Semiconductor RGA80Tx 1200V场截止沟槽型IGBT此系列器件具有低开关和导通损耗,非常适合用于电动压缩机和高压加热器。2024/10/17 -
STMicroelectronics STGHU30M65DF2AG汽车级IGBT采用先进的沟槽式栅极场终止型结构进行开发。2024/9/12 -
STMicroelectronics STGWA30M65DF2AG汽车级IGBT设计采用先进、专有的沟槽式栅极场终止型结构。2024/9/12 -
IXYS Gen5 XPT IGBT具有650V额定电压、35A至220A电流范围以及低栅极电荷。2024/7/25 -
Infineon Technologies 车规级IGBT EDT2分立器件750V IGBT技术可提高汽车传动系应用的能效。2024/7/19 -
STMicroelectronics GWA40MS120DF4AG汽车级MS系列IGBT1200V、40A、低损耗、低热阻,采用TO-247长引线封装。2024/7/3 -
onsemi AFGHxL40T车规级IGBT符合AEC-Q101标准,采用坚固的场终止型VII沟槽结构。2024/6/12 -
onsemi FGB5065G2-F085 EcoSD® 2 HV-HE IGBT650V N沟道点火器件,用于PTC加热器和大电流系统应用。2024/6/4 -
Diotec Semiconductor DIWOx Fast Switching IGBT TransistorsInclude a reverse diode and use Trench and Fieldstop technology in a TO-247 package.2024/4/24 -
PANJIT PTGH High-Speed 650V Field Stop Trench IGBTsOffer superior high-speed switching capabilities with a low saturation voltage of 1.65V at TVJ 25°C.2024/4/12 -
onsemi 热泵热泵是全球向安全和可持续加热转变的基石。2024/3/1 -
onsemi AFGHL50T65RQDN 650V 50A IGBT采用创新技术的第四代场终止型IGBT。2024/3/1 -
onsemi FGY4LxxT120SWD N沟道1200V IGBT该器件采用新颖的场终止型第7代IGBT技术和第7代二极管。2024/2/7 -
Bourns 电气化解决方案变压器、扼流圈、电阻器及其他专为电气化系统设计的产品。2023/12/20 -
onsemi FGHL60T120RWD 1200V 60A分立式IGBT采用 先进的第7代IGBT技术,采用TO247三引脚封装。2023/11/29 -
onsemi FGHL40T120RWD 1200V 40A分立式IGBT采用第7代IGBT技术,采用TO247三引脚封装。2023/11/29 -
onsemi AFGHxL25T单N沟道1200V 25A IGBT这些器件采用坚固、高性价比的场终止型VII沟槽结构。2023/11/22 -
onsemi FGY140T120SWD 1200V 140A快速分立式IGBT采用先进的第7代IGBT技术。2023/11/13 -
