特性
- High output power capability
- 4 x 52W/4Ω max.
- 4 x 30W/4Ω @ 14.4V, 1kHz, 10%
- 4 x 85W/2Ω max.
- 4 x 55W/2Ω @ 14.4V, 1kHz, 10%
- MOSFET output power stage
- Capable to operate in low voltage conditions
- Excellent GSM noise immunity
- Excellent 2Ω driving capability
- Hi-Fi class distortion
- Low output noise
- Standby function and mute function
- Automute at min. supply voltage detection
- Low external component count
- Internally fixed gain (26dB)
- No external compensation
- No bootstrap capacitors
- On board 0.4A high side driver
- Protections
- Output short circuit to GND, to Vs, across the load
- Very inductive loads
- Overrating chip temperature with soft thermal limiter
- Output DC offset detection
- Load dump voltage
- Fortuitous open GND
- Reversed battery
- ESD
Block Diagram
发布日期: 2015-01-05
| 更新日期: 2022-03-11

