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STMicroelectronics EVALSTDRV600HB8开发板

STMicroelectronics EVALSTDRV600HB8开发板设计用于L638xE和L639x高压栅极驱动器。L638xE和L639x驱动器是用于N通道功率MOSFET或IGBT的单芯片半桥栅极驱动器。这些L638xE和L639x驱动器是采用BCD™“离线”技术制造的高压器件。EVALSTDRV600HB8开发板由采用SO8封装的两个样件（L638xE和L639x）组成，支持评估额定电压高达600V的栅极驱动器特性和功能。另外，SO8封装还支持多种高电压、高侧和低侧驱动器器件。该开发板还配有滤波电容器、自举电容器以及集成式自举二极管等无源元件，旨在实现更加紧凑和更具成本效益的解决方案。

The EVALSTDRV600HB8 board consists of two samples (L638xE and L639x) in the SO8 package allows evaluating gate driver features and functionalities with voltage rating up to 600V. This SO8 package also supports several high voltages, high-side, and low-side driver devices. The development board also comes with passive components such as filtering, bootstrap capacitor, and integrated bootstrap diode designed to allow more compact and cost-effective.

特性

  • Half-bridge configuration
  • 600V high voltage rail
  • Includes samples of each compatible gate driver in SO8 package
    • L6385E, L6387E, L6388E, L6389E, L6395, L6398, and L6399
  • Compatible with MOSFETs or IGBTs in ±50V/ns dv/dt transient immunity in full temperature range
  • Integrated bootstrap diode
  • Dedicated high-side and low-side driving inputs
  • Compact and simplified layout
  • Gate drivers in the kit feature different functionalities and characteristics:
    • UVLO on both high-side and low-side
    • Internal deadtime or no deadtime
    • Interlocking for anti cross-conduction protection
    • Ability to drive asymmetrical half-bridges and switched reluctance motors
    • Active high or active low Local Interconnect Network (LIN) for single input gate driving

Associated Product

STMicroelectronics STMicroelectronics L638xE和L639x栅极驱动器

设计用于在高侧（浮动）部分MOSFET或IGBT器件中承受高达600V的电压轨。

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发布日期: 2017-11-24 | 更新日期: 2022-06-23