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STMicroelectronics STMicroelectronics L638xE和L639x栅极驱动器

STMicroelectronics L638xE和L639x栅极驱动器是用于N通道功率MOSFET或IGBT的单芯片半桥栅极驱动器。这些L638xE和L639x器件是采用BCD™“离线”技术制造的高压器件。这些高压栅极驱动器设计用于在高侧（浮动）部分承受高达600V的电压轨。L638xE和L639x栅极驱动器的逻辑输入与CMOS或TTL兼容，可轻松连接控制器件。L638xE栅极驱动器采用DIP-8、SO-8、DIP-14以及SO-14管封装。L639x栅极驱动器采用SO-8、SO-14管以及SO-16管封装。

特性

  • L638xE:
    • High voltage rail up to 600V
    • dV/dt immunity ±50V/nsec in full temperature range
    • Driver current capability:
      • 400mA source
      • 650mA sink
    • Switching times 50/30nsec (L6385E and L6387E) rise/fall with 1nF load
    • Switching times 70/40nsec (L6389E and L6388E) rise/fall with 1nF load
    • CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
    • Undervoltage lockout on lower and upper driving section
    • Internal bootstrap diode
    • Outputs in phase with inputs
  • L639x:
    • High voltage rail up to 600V
    • dV/dt immunity ± 50V/ns in full temperature range
    • Driver current capability:
      • 290mA source
      • 430mA sink
    • Switching times 75/35ns rise/fall with 1nF load
    • 3.3V, 5V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diode
    • Compact and simplified layout
    • Bill of material reduction
    • Effective fault protection
    • Flexible, easy, and fast design

应用

  • Home appliances
  • Induction heating
  • Motor drivers
    • DC, AC, PMDC, and PMAC motors
  • Lighting applications
  • Industrial applications and drives
  • HVAC
  • Factory automation
  • Power supply systems

Associated Development Board

STMicroelectronics EVAL6393FB开发板

设计用于演示如何使用两个L6393驱动器并通过全桥拓扑来驱动单相负载。

Learn More关于STMicroelectronics EVAL6393FB开发板 View Products与STMicroelectronics EVAL6393FB开发板相关

STMicroelectronics EVALSTDRV600HB8开发板

设计用于采用BCD™技术制造的L638xE和L639x高压器件。

Learn More关于STMicroelectronics EVALSTDRV600HB8开发板 View Products与STMicroelectronics EVALSTDRV600HB8开发板相关
发布日期: 2017-12-04 | 更新日期: 2022-06-27