STMicroelectronics STBP电压保护集成电路
STMicroelectronics STBP电压保护集成电路可以为高达+28V的输入电压提供过压保护。它们的低RDS(on)N沟道MOSFET开关可保护连接到OUT引脚的系统，以防DC电源故障，满足中国信息产业部通信标准YD/T 1591-2006。在输入过压情况下，器件通过关闭内部低RDS(on)N沟道MOSFET开关立即可断开DC电源，从而防止损坏受保护部件。另外，这些器件也监控自身结温，如果结温超出给定限值，则关断内部MOSFET。每一器件均可由微控制器控制，并能提供关于故障情况的状态信息。
特性
- Input overvoltage protection up to 28V
- Integrated high voltage N-channel MOSFET switch
- Low RDS(on)
- Integrated charge pump
- Maximum continuous current of up to 2A
- Thermal shutdown protection
- Soft-start feature to control the inrush current
- Enable input (EN)
- Fault indication output (FLT)
- IN input ESD withstand voltage up to ±15kV (air discharge), up to ±8kV (contact discharge) in a typical application circuit with 1μF input capacitor (±2kV HBM for standalone device)
- Certain overvoltage options compliant with the China Communications Standard YD/T 1591-2006 (overvoltage protection only)
- Small, RoHS compliant TDFN 8-lead package or TFDN 10-lead package
STBP112 Block Diagram
STBP120 Block Diagram
Complete Your Design
STMicroelectronics 标准产品
各种可直接替换器件，适用于通用模拟IC、分立元件和串行EEPROM。
发布日期: 2014-01-21
| 更新日期: 2022-03-11