特性
- 高压轨:高达1200V
- 灌/拉驱动器电流能力:6A/10A(+25°C时)
- 共模瞬态抑制 (CMTI):±200V/ns
- 输入-输出传播延迟:75ns
- Miller CLAMP驱动器,用于外部N沟道MOSFET 0.3A拉电流/0.5A灌电流
- 可调节软关断功能
- VDD UVLO
- IGBT和SiC型号
- VH UVLO
- 去饱和保护
- 栅极驱动电压:高达32V
- 负栅极驱动电压:高达-10V
- 3.3V、5V TTL/CMOS输入,带迟滞
- 温度关断保护
- 加固电容隔离
- 隔离电压VISO = 5.7kVRMS(UL 1577)
- 瞬态过电压VIOTM = 8kVPEAK(IEC 60747-17)
- 最大重复隔离电压VIORM = 1.2kVPEAK(IEC 60747-17)
- 工作温度范围:-40 °C至+125 °C
- 宽体SO-16W封装
应用
- 电机驱动器,用于家用电器、工厂自动化、工业驱动器和风扇
- 600V/1200V逆变器
- 电池充电器
- 感应加热
- 焊接
- 不间断电源(UPS)
- 电源单元
- 直流-直流转换器
- 功率因数校正
框图
资源
视频
View Results ( 10 ) Page
| 物料编号 | 数据表 | 描述 |
|---|---|---|
| STGAP3S6STR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver SiC 6A Source/Sink desat protect SOFTOFF |
| STGAP3SXSTR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver SiC 10A Source/Sink desat protect SOFTOFF |
| STGAP3S6ITR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver IGBTs 6A Source/Sink desat protect SOFTOFF |
| STGAP3SXITR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver IGBTs 10A Source/Sink desat protect SOFTOFF |
| STGAP3S3IFTR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated 3 A single gate drivers with protection features |
| STGAP3S3STR | ![]() |
电流隔离式栅极驱动器 Galvanically isolated 3 A single gate drivers with protection features |
| STGAP3SXS | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver SiC 10A Source/Sink desat protect SOFTOFF |
| STGAP3S6I | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver IGBTs 6A Source/Sink desat protect SOFTOFF |
| STGAP3S6S | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver SiC 6A Source/Sink desat protect SOFTOFF |
| STGAP3SXI | ![]() |
电流隔离式栅极驱动器 Galvanically isolated gate driver IGBTs 10A Source/Sink desat protect SOFTOFF |
发布日期: 2024-12-16
| 更新日期: 2026-02-25


