Texas Instruments ISO5852S IGBT MOSFET 栅极驱动器

德州仪器德州仪器 ISO5852S 栅极驱动器是一款用于 IGBT 和 MOSFET 的 5.7kV_RMS增强型隔离栅极驱动器，具有 2.5A 的拉电流和 5A 的灌电流。输入边采用 2.25V 到 5.5V 的单电源供电。输出边允许的电源范围：从 15V（最小值）至 30V（最大值）。两个互补 CMOS 输入控制栅极驱动器的输出状态。76ns 的短暂传播时间保证精确控制输出级。典型应用有工业电机控制驱动器&、工业电源、太阳能逆变器、 HEV & 和 EV 电源模块和感应加热中的 IGBT 和 MOSFET。

特性

100kV/µs Minimum Common-Mode Transient Immunity (CMTI) at V_CM = 1500V
Split outputs to provide 2.5A peak source and 5A peak sink currents
76ns (Typ), 110ns (Max) Short propagation delay
2A Active miller clamp
Output short-circuit clamp
Soft Turn-Off (STO) during short circuit
Fault alarm upon desaturation detection is signaled on FLT and reset through RST
Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) pin indication
Active output pull-down and default low outputs with low supply or floating inputs
2.25V to 5.5V Input supply voltage
15V to 30V Output driver supply voltage
CMOS Compatible inputs

Rejects input pulses and noise transients shorter than 20ns
-40°C to 125°C Ambient operating temperature
Surge immunity 12800VPK (according to IEC 61000-4-5)
Safety and regulatory certifications
- 8000V_PK V_IOTM and 2121V_PK V_IORM reinforced isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700V_RMS Isolation for 1 minute per UL 1577
- CSA Component acceptance Notice 5A, IEC 60950-1, IEC 60601-1 and IEC 61010-1 end equipment standards
- CQC Certification per GB4943.1-2011
- All certifications are planned

应用

Isolated IGBT and MOSFET Drives in
- Industrial motor control drives
- Industrial power supplies
- Solar inverters
- HEV and EV power modules
- Induction heating