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Texas Instruments TPS54116-Q1 同步降压转换器

Texas Instruments TPS54116-Q1 同步降压转换器配有两个集成的 MOSFET 和 1A 拉/灌双数据速率 (DDR) VTT 终端稳压器，带 VTTREF 缓冲基准输出。 该降压稳压器通过集成 MOSFET 和减小电感器尺寸来最大限度地减小解决方案尺寸，开关频率高达 2.5MHz。 对于噪声敏感应用，可将开关频率设置为中波无线电频带以上，并且可以与外部时钟进行同步。 同步整流保持在整个输出负载范围内频率固定不变。 通过集成 25mΩ 低侧和 33mΩ 高侧 MOSFET 使效率达到最大。 逐周期峰值限流在过流条件下保护器件。 也可以通过 ILIM 引脚的电阻器进行调整，使较小的电感器发挥最大效用。

特性

  • AEC-Q100 qualified with the following results
    • Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • 4A synchronous buck converter
    • Integrated 33mΩ high-side and 25mΩ low-side MOSFETs
    • Fixed frequency current-mode control
    • Adjustable frequency from 100kHz to 2.5MHz
    • Synchronizable to an external clock
    • 0.6V ±1% voltage reference over temperature
    • Adjustable cycle-by-cycle peak current limit
    • Monotonic start-up into pre-biased outputs
  • Single-chip DDR2, DDR3, and DDR3L memory power solution
  • 1A source/sink termination LDO with ±20mV DC accuracy
    • Stable with 2×10µF MLCC capacitor
    • 10mA source/sink buffered reference output regulated to within 49% to 51% of VDDQ
  • Independent enable pins with adjustable UVLO and hysteresis
  • Thermal shutdown
  • –40°C to 150°C operating TJ
  • 24-pin, 4mm×4mm WQFN package

应用

  • DDR2, DDR3, DDR3L, and DDR4 memory power supplies in embedded computing systems
  • SSTL_18, SSTL_15, SSTL_135, SSTL_12 and HSTL termination
  • Infotainment and cluster
  • Advanced Driver Assistance Systems (ADAS)

Simplified Schematic

原理图 - Texas Instruments TPS54116-Q1 同步降压转换器

Related Development Tool

Texas Instruments TPS54116-Q1EVM-830 DDR Power Solution EVM

Facilitates the evaluation of the TPS54116-Q1, an automotive DDR power solution .

Learn More关于Texas Instruments TPS54116-Q1EVM-830 DDR Power Solution EVM View Products与Texas Instruments TPS54116-Q1EVM-830 DDR Power Solution EVM相关
发布日期: 2016-09-13 | 更新日期: 2025-03-06