Toshiba U-MOSVIII-H低压高效MOSFET
Toshiba U-MOSVIII-H低压高效MOSFET专门设计用于笔记本电脑适配器、游戏机、服务器、台式电脑、平板显示器等的AC-DC电源的二次侧，另外还用于通信设备、服务器和数据中心的DC-DC电源。Toshiba U-MOSVIII-H低压高效MOSFET采用最新的第8代沟槽MOS工艺制造，有助于提高电源效率。其他特性包括低漏极-源极导通电阻、低漏电流和高耐雪崩性。该系列还包括采用小型封装的汽车级MOSFET。
特性
- 低漏极-源极导通电阻
- 低漏电流
- 增强模式： Vth = 2.0V至4.0V时
- 采用专为各种电源应用设计的第8代沟槽MOS工艺制造
- 具有高耐雪崩性
- 与典型的第4代沟槽MOS工艺相比，导通电阻 (RON) 和输入电容 (CISS) 之间实现了更好的折衷效果
- 与前代产品相比，可降低辐射噪声
应用
- 开关稳压器
- 电机驱动器
- DC-DC转换器
视频
对比图
应用笔记
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
发布日期: 2013-01-02
| 更新日期: 2024-10-16